PIM con IGBT in campo Trench Field, diodo controllato con emettitore e moutle NTC

Symbo

Description

Conditions

Values

Unit

VCES

Collector-Emitter Voltage

Ty=25℃

1200

V

VGEs

Gate-Emitter Peak Voltage

Ty=25℃

±20

V

Ic

Continuous DC Collector Current

Tc=100℃

35

A

CRM

Repetitive Peak Collector Current

tp=1ms

70

A

Ptot

Total Power Dissipation

Tc=25℃,Tyimax=175℃

172

W

Symbo

Description

Conditions

Values

Unit

Min

Typ.

Max.

VcE(sat)

Collector-Emitter Saturation Voltage

VGE=15V,Ic=35A,Ty=25℃

2.15

V

VGE=15V,Ic=35A,Tv=125℃

2.57

V

VgE(th

Gate Threshold Voltage

VGE=VcE,c=1.2mA

5.6

V

CES

Collector-Emitter Cut-Off Current

VcE=1200V,VGE=0V

1

mA

GES

Gate-Emitter Leakage Current

VGE=20V,VcE=0V

100

nA

Cies

Input Capacitance

VcE=25V,VGE=OV,f=1MHz

2590

pF

Coes

Output Capacitance

180

pF

Cres

Reverse Transfer Capacitance

86

pF

td(on)

Turn-on Delay Time

VcE=600V  VGF=±15V Ic=35A

Rg=120

Inductive Load Ty=25℃

34

ns

t

Turn-on Rise Time

20

ns

td(off)

Turn-off Delay Time

230

ns

t

Turn-off Fall Time

160

ns

Eon

Turn-on Switching Loss

2.5

mJ

Eoff

Turn-off Switching Loss

2.5

mJ

lsc

Short Circuit Data

VGE≤15V,Vcc=800V  tp≤10μs,Tv=150℃

151

A

RthJC

Thermal Resistance,Junction to Case

Per IGBT

0.87

K/W

Tw OF

Virtual JunctionTemperature

Under Switching

-40

150

℃