Capacità ad alta cortocircuito 650V Modulo di potenza IGBT 200A
$3310-99 Piece/Pieces
$25≥100Piece/Pieces
Tipo di pagamento: | L/C,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land |
Porta: | SHANGHAI |
Modello: YZPST-SKM195GB066D
marchio: Yzpst
Luogo D'origine: Cina
VCES: 650V
IC: 200A
ICRM: 400A
VGE: ± 20 V.
Ptot: 695W
Unità vendibili | : | Piece/Pieces |
Tipo pacchetto | : | 1. Packaging antielettrostatico 2. Casella di cartone 3. Braccia |
Esempio immagine | : | |
Scaricare | : |
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Tipo di modulo di potenza IGBT: YZPST-SKM195GB066D
Applicazioni
Inverter per l'unità del motore
Amplificatore AC e DC Servo Drive
UPS (alimentatori non interruplibili)
Welding Maching Switching soft
Caratteristiche
Basso VCE (SAT) con tecnologia di stop field di trincee
VCE (SAT) con coefficiente di temperatura positivo
Compreso FWD anti-parallelo recupero veloce e morbido
Elevata capacità di corto circuito (10us)
Struttura del modulo a bassa induttanza
Temperatura di giunzione massima 175 ℃
Assoluto Massimo Valutazioni
Parameter |
Symbol |
Conditions |
Value |
Unit |
Collector-Emitter Voltage |
VCES |
VGE=0V, IC =1mA, Tvj=25℃ |
650 |
V |
Continuous Collector Current |
IC |
Tc=100℃ |
200 |
A |
Peak Collector Current |
ICRM |
tp=1ms |
400 |
A |
Gate-Emitter Voltage |
VGES |
Tvj=25℃ |
±20 |
V |
Total Power Dissipation (IGBT-inverter) |
Ptot |
Tc=25℃ Tvjmax=175℃ |
695 |
W |
Caratteristiche IGBT
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =3.2mA,Tvj=25℃ | 5.1 | 5.8 | 6.3 | V |
VCE=650V,VGE=0V, Tvj=25℃ | 1 | mA | ||||
Collector-Emitter Cut-off Current | ICES | VCE=650V,VGE=0V, Tvj=125℃ | 5 | mA | ||
Collector-Emitter | Ic=200A,VGE=15V, Tvj=25℃ | 1.45 | 1.95 | V | ||
Saturation Voltage | VCE(sat) | Ic=200A,VGE=15V, Tvj=125℃ | 1.65 | V | ||
Input Capacitance | Cies | VCE=25V,VGE =0V, | 12.3 | nF | ||
Reverse Transfer Capacitance | Cres | f=1MHz, Tvj=25℃ | 0.37 | nF | ||
Internal Gate Resistance | Rgint | 1 | Ω | |||
Turn-on Delay Time | td(on) | 48 | Ns | |||
Rise Time | tr | IC =200 A | 48 | Ns | ||
Turn-off Delay Ttime | td(off) | VCE =300 V | 348 | Ns | ||
Fall Time | tf | VGE = ±15V | 58 | Ns | ||
Energy Dissipation During Turn-on Time | Eon | RG = 3.6Ω | 2.32 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=25℃ | 5.85 | mJ | ||
Turn-on Delay Time | td(on) | 48 | Ns | |||
Rise Time | tr | IC =200 A | 48 | Ns | ||
Turn-off Delay Time | td(off) | VCE = 300V | 364 | Ns | ||
Fall Time | tf | VGE = ±15V | 102 | Ns | ||
Energy Dissipation During Turn-on Time | Eon | RG =3.6Ω | 3.08 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=125℃ | 7.92 | mJ | ||
SC Data | Isc | Tp≤10us,VGE=15V,Tvj=150℃ , Vcc=300V,VCEM≤650V | 1000 | A |
Caratteristiche del diodo
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Diode DC Forward Current | IF | Tc=100℃ | 200 | A | ||
Diode Peak Forward Current | IFRM | 400 | A | |||
IF=200A,Tvj=25℃ | 1.55 | 1.95 | V | |||
Forward Voltage | VF | IF=200A,Tvj=125℃ | 1.5 | V |
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Recovered Charge | Qrr | 8.05 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 148 | A | ||
Reverse Recovery Energy | Erec | Tvj=25℃ | 1.94 | mJ | ||
Recovered Charge | Qrr | 16.9 | uC | |||
IF =200 A | ||||||
VR=300V | ||||||
Peak Reverse Recovery Current | Irr | -diF/dt =4200A/us | 186 | A | ||
Reverse Recovery Energy | Erec | Tvj=125℃ | 3.75 | mJ |
Modulo caratteristiche stics t c = 25 ° C se non diversamente specificato
Parameter | Symbol | Conditions | Value | Unit | ||
Min. | Typ. | Max. | ||||
Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V | ||
Maximum Junction Temperature | Tjmax | 150 | ℃ | |||
Operating Junction Temperature | Tvj op | -40 | 125 | ℃ | ||
Storage Temperature | Tstg | -40 | 125 | ℃ | ||
per IGBT-inverter | 0.19 | K/W | ||||
Junction-to Case | R θjc | per Diode-inverter | 0.31 | K/W | ||
Case to Sink | R θcs | Conductive grease applied | 0.085 | K/W | ||
Module ElectrodesTorque | Mt | Recommended(M5) | 2.5 | 5 | N · m | |
Module-to-SinkTorque | Ms | Recommended(M6) | 3 | 5 | N · m | |
Weight of Module | G | 150 | g |
Pacchetto Dimensioni
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