Caso a bassa induttanza 600HFX170C6S 1700V 600A Modulo IGBT
$1905-99 Piece/Pieces
$140≥100Piece/Pieces
Tipo di pagamento: | L/C,Paypal,T/T |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
$1905-99 Piece/Pieces
$140≥100Piece/Pieces
Tipo di pagamento: | L/C,Paypal,T/T |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
Modello: YZPST-600HFX170C6S
marchio: Yzpst
Luogo D'origine: Cina
VCES: 1700V
VGE: ± 20 V.
ICM: 1200A
PD: 4166W
VRRM: 1700V
IF: 600A
IFM: 1200A
Unità vendibili | : | Piece/Pieces |
Tipo pacchetto | : | 1. Packaging antielettrostatico 2. Casella di cartone 3. Braccia |
Esempio immagine | : | |
Scaricare | : |
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1700V/600A 2 in un pacchetto
Descrizione generale
Il modulo di potenza IGBT fornisce ultra
Bassa perdita di conduzione e robustezza del corto circuito.
Sono progettati per le applicazioni come
Inverter e UPS generale.
Caratteristiche
. Tecnologia IGBT a bassa VCE (SAT)
. Capacità di cortocircuito 10 μs
. VCE (SAT) con coefficiente di temperatura positivo
. Temperatura di giunzione massima 175OC
. Caso a bassa induttanza
. Recupero inverso rapido e morbido FWD anti-parallelo
. Piastra di base di rame isolata usando la tecnologia DBC
Applicazioni tipiche
. Inverter per l'unità del motore
. Amplificatore AC e DC Servo Drive
. Alimentazione ininterrotto
IGBT
Symbol |
Description |
Value |
Unit |
VCES |
Collector-Emitter Voltage |
1700 |
V |
VGES |
Gate-Emitter Voltage |
±20 |
V |
IC |
Collector Current TC=25oC TC= 100oC |
1069 600 |
A |
ICM |
Pulsed Collector Current tp=1ms |
1200 |
A |
PD |
Maximum Power Dissipation T =175oC |
4166 |
W |
Symbol |
Description |
Value |
Unit |
VRRM |
Repetitive Peak Reverse Voltage |
1700 |
V |
IF |
Diode Continuous Forward Current |
600 |
A |
IFM |
Diode Maximum Forward Current tp=1ms |
1200 |
A |
Symbol |
Description |
Value |
Unit |
Tjmax |
Maximum Junction Temperature |
175 |
oC |
Tjop |
Operating Junction Temperature |
-40 to +150 |
oC |
TSTG |
Storage Temperature Range |
-40 to +125 |
oC |
VISO |
Isolation Voltage RMS,f=50Hz,t=1min |
4000 |
V |
IGBT Caratteristiche TC = 25oc se non diversamente indicato
Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
IC=600A,VGE=15V, Tj=25oC | 1.85 | 2.2 | ||||
VCE(sat) | Collector to Emitter | IC=600A,VGE=15V, Tj=125oC | 2.25 | V | ||
Saturation Voltage | IC=600A,VGE=15V, Tj=150oC | 2.35 | ||||
VGE(th) | Gate-Emitter Threshold Voltage | IC= 12.0mA,VCE=VGE, Tj=25oC | 5.6 | 6.2 | 6.8 | V |
ICES | Collector Cut-Off | VCE=VCES,VGE=0V, | 5 | mA | ||
Current | Tj=25oC | |||||
IGES | Gate-Emitter Leakage Current | VGE=VGES,VCE=0V, Tj=25oC | 400 | nA | ||
RGint | Internal Gate Resistance | 1.3 | Ω | |||
Cies | Input Capacitance | VCE=25V,f=1MHz, | 72.3 | nF | ||
Cres | Reverse Transfer | VGE=0V | 1.75 | nF | ||
Capacitance | ||||||
QG | Gate Charge | VGE=- 15…+15V | 5.66 | μC | ||
td(on) | Turn-On Delay Time | 170 | ns | |||
tr | Rise Time | 67 | ns | |||
td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj=25oC | 527 | ns | ||
tf | Fall Time | 138 | ns | |||
Eon | Turn-On Switching | 154 | mJ | |||
Loss | ||||||
Eoff | Turn-Off Switching | 132 | mJ | |||
Loss | ||||||
td(on) | Turn-On Delay Time | 168 | ns | |||
tr | Rise Time | 80 | ns | |||
td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 125oC | 619 | ns | ||
tf | Fall Time | 196 | ns | |||
Eon | Turn-On Switching | 236 | mJ | |||
Loss | ||||||
Eoff | Turn-Off Switching | 198 | mJ | |||
Loss | ||||||
td(on) | Turn-On Delay Time | 192 | ns | |||
tr | Rise Time | 80 | ns | |||
td(off) | Turn-Off Delay Time | VCC=900V,IC=600A, RG= 1.0Ω,VGE=±15V, Tj= 150oC | 640 | ns | ||
tf | Fall Time | 216 | ns | |||
Eon | Turn-On Switching | 259 | mJ | |||
Loss | ||||||
Eoff | Turn-Off Switching | 215 | mJ | |||
Loss | ||||||
tP≤10μs,VGE=15V, | ||||||
ISC | SC Data | Tj=150oC,VCC= 1000V, VCEM≤1700V | 2400 | A |
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