$4550-499 Piece/Pieces
$38≥500Piece/Pieces
| Tipo di pagamento: | L/C,T/T,Paypal |
| Incoterm: | FOB,CIF,CFR |
| Trasporti: | Ocean,Land,Express,Others |
| Porta: | SHANGHAI |
Ombra:
Modello: YZPST-P150HFN120AT1R6
marchio: Yzpst
Luogo D'origine: Cina
VcEs: 1200V
VGEs: ±20V
Lc: 150A
CRM: 300A
Ptot: 1500W
VcE(sat: 2.2V
VgE(th: 2.5V
| Unità vendibili | : | Piece/Pieces |
| Tipo pacchetto | : | 1. Packaging antielettrostatico 2. Casella di cartone 3. Braccia |
| Scaricare | : |
|
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P/N: YZPST-P150HFN120AT1R6
Modulo da 62 mm con trincea rapida/fieldstop Igbt e Veloce Recupero Diodo
Caratteristiche
■ Perdite di commutazione basse
■ basso vcesal
■ VCE basso (SAT con coefficiente di temperatura positivo
Applicazioni
■ Drive motorie
Sistemi UPS
■ Inverter ad alta potenza
Schema di circuito equivalente
IGBT -Inverter
Valori di massima valutazione
|
Symbol |
Description |
Conditions |
Values |
Unit |
|
VcEs |
Collector-Emitter Voltage |
Tv=25℃ |
1200 |
V |
|
VGEs |
Gate-Emitter Peak Voltage |
Ty=25℃ |
±20 |
V |
|
lc |
Continuous DC Collector Current |
Tc=100℃ |
150 |
A |
|
CRM |
Repetitive Peak Collector Current |
tp=1ms |
300 |
A |
|
Ptot |
Total Power Dissipation |
Tc=25℃,Tyjmax=175℃ |
1500 |
W |
| Symbol | Values | |||||
| Description | Conditions | Min. | Typ. | Max. | Unit | |
| VcE(sat | Collector-Emitter Saturation Voltage | VcE=15V,Ic=150A,Tv=25℃ | 2.2 | V | ||
| Vge=15V,Ic=150A,Tv=125℃ | 2.5 | V | ||||
| VgE(th | Gate Threshold Voltage | VgE=VcE,Ic=3.8mA | 5 | 5.8 | 6.5 | V |
| IcEs | Collector-Emitter Cut-Off Current | VcE=1200V,VgE=0V | mA | |||
| GES | Gate-Emitter Leakage Current | VcE=20V,VcE=0V | 600 | nA | ||
| RGint | Internal Gate Resistor | Ty=25℃ | 3.8 | Ω | ||
| Cies | Input Capacitance | 11.5 | nF | |||
| Coes | Output Capacitance | Vce=25V,Vce=0V,f=1MHz | 1 | nF | ||
| Cres | Reverse Transfer Capacitance | 0.4 | nF | |||
| tt(on) | Turn-on Delay Time | 139 | ns | |||
| Vcc=600V | ||||||
| t | Turn-on Rise Time | VoE=±15V | 37 | nS | ||
| d(a) | Turn-off Delay Time | Ic=150A | 192 | nS | ||
| t | Turn-off Fall Time | Rg=2.0g | 128 | nS | ||
| Eon | Turn-on Switching Loss | Inductive Load | 7.9 | -= | mJ | |
| E₀ff | Turn-off Switching Loss | Ty=25℃ | 8.4 | mJ | ||
| Isc | Short Circuit Data | VcE≤15V,Vcc=600V | 518 | A | ||
| tp≤10μs,Tv=25℃ | ||||||
| Thermal Resistance,Junction to Case | Per IGBT | —-- | 0.1 | —-- | K/W | |
| Twop | Virtual Junction Temperature | Under Switching | -40 | 150 | ℃ | |
Diodo -Inverter
Massimo Valori nominali
|
Symbol |
Description |
Conditions |
Values |
Unit |
|
VRRM |
Repetitive Peak Reverse Voltage |
Tv=25℃ |
1200 |
V |
|
lF |
Continuous DC Forward Current |
|
150 |
A |
|
lFRM |
Repetitive Peak Collector Current |
tp=1ms |
300 |
A |
Valori caratteristici
| Symbol | Values | |||||
| Description | Conditions | Min. | Typ | Max. | Unit | |
| Forward Voltage | lr=150A,Vse=0V,Tv=25℃ | 2.5 | V | |||
| VF | l=150A,Vge=0V,Tv=125℃ | 1.9 | —-- | V | ||
| RM | Peak Reverse Recovery Current | —-- | 42 | A | ||
| Qr | Recovered Charge | l=150A,Vg=600V,Vge=-15V | 3.1 | uC | ||
| Erec | Reverse Recovery Energy | Ty=25℃ | 1.1 | mJ | ||
| Tuop | Virtual Junction Temperature | Under Switching | -40 | 150 | ℃ | |
Pacchetto contorni (mm)
Numero Di Telefono: 86-514-87782298
Whatsapp: +86 13805278321
Azienda Indirizzo: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
sito web: https://it.yzpst.com
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