Struttura del modulo di induttanza a bassa struttura 1200V 400A Modulo di potenza IGBT
$1325-49 Piece/Pieces
$98≥50Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
$1325-49 Piece/Pieces
$98≥50Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
Modello: YZPST-FF600R12ME4
marchio: Yzpst
Luogo D'origine: Cina
VCE: 1200v
IC: 600A
ICRM: 1200A
VGE: ± 20 V.
Ptot: 3750W
Tvjop: -40--+150℃
Tstg: -40--+125℃
Unità vendibili | : | Piece/Pieces |
Tipo pacchetto | : | 1. Packaging antielettrostatico 2. Casella di cartone 3. Braccia |
Esempio immagine | : | |
Scaricare | : |
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Struttura del modulo a bassa induttanza
Assoluto Massimo Giudizi
Parameter |
Symbol |
Conditions |
Value |
Unit |
Collector-Emitter Voltage |
VCES |
VGE=0V, IC =1mA, Tvj=25℃ |
1200 |
V |
Continuous Collector Current |
IC |
Tc=100℃ |
600 |
A |
Peak Collector Current |
ICRM |
ICRM=2IC |
1200 |
A |
Gate-Emitter Voltage |
VGES |
Tvj=25℃ |
±20 |
V |
Total Power Dissipation (IGBT-inverter) |
Ptot |
Tc=25℃ Tvjmax=175℃ |
3750 |
W |
Caratteristiche IGBT
Parameter | Value | Unit | ||||
Symbol | Conditions | Min. | Typ. | Max. | ||
Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =3mA,Tvj=25℃ | 5 | 5.8 | 6.5 | V |
VCE=1200V,VGE=0V, Tvj=25℃ | 1 | mA | ||||
Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V, Tvj=125℃ | 5 | mA | ||
Collector-Emitter | Ic=600A,VGE=15V, Tvj=25℃ | 1.7 | V | |||
Saturation Voltage | VCE(sat) | Ic=600A,VGE=15V, Tvj=125℃ | 2 | V | ||
Input Capacitance | Cies | 43.1 | nF | |||
Output Capacitance | Coes | VCE=25V,VGE =0V, | 2.25 | nF | ||
Reverse Transfer Capacitance | Cres | f=1MHz, Tvj=25℃ | 1.95 | nF | ||
Internal Gate Resistance | Rgint | 1.25 | Ω | |||
Turn-on Delay Time | td(on) | 250 | ns | |||
Rise Time | tr | IC =600 A | 88 | ns | ||
Turn-off Delay Time | td(off) | VCE = 600 V | 560 | ns | ||
Fall Time | tf | VGE = ±15V | 131 | ns | ||
Energy Dissipation During Turn-on Time | Eon | RG = 1.2Ω | 33.1 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=25℃ | 57.8 | mJ | ||
Turn-on Delay Time | td(on) | 300 | ns | |||
Rise Time | tr | IC =600 A | 102 | ns | ||
Turn-off Delay Time | td(off) | VCE = 600 V | 650 | ns | ||
Fall Time | tf | VGE = ±15V | 180 | ns | ||
Energy Dissipation During Turn-on Time | Eon | RG = 1.2Ω | 50.2 | mJ | ||
Energy Dissipation During Turn-off Time | Eoff | Tvj=125℃ | 87.8 | mJ | ||
Tp≤10us,VGE=15V, | ||||||
SC Data | Isc | Tvj=150℃,Vcc=600V, | 2400 | A | ||
VCEM≤1200V |
Pacchetto Dimensioni
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