Modulo di controllo generatore di fabbrica

V_DRM

V_RRM

V_RSM

1600V

1600V

1700V

Symbol

Conditions

Values

Units

I_T(AV)

sin. 180; T_C=85°C

55

A

I_F(AV)

I_RMS

130/3×100

I_TSM

T_vj=25°C; 10ms

1500

A

I²t

T_vj=25°C; 8.3-10ms

11

KA²s

V_T

T_vj=25°C; I_T=200A

max. 1.65

V

I_DD

I_RD

T_vj=125°C; V_RD=V_RRM; V_DD=V_DRM

max. 15

mA

t_gd

T_vj=25°C; I_G=1A; di_G/dt=1A/μs; V_D=2/3V_DRM

1

μs

t_gr

2

(di/dt)_cr

T_vj=125°C

max. 150

A/μs

(dv/dt)_cr

T_vj=125°C

max. 1000

V/μs

t_q

T_vj=125°C

80

μs

I_H

T_vj=25°C; typ. /max.

150/250

mA

I_L

T_vj=25°C; R_G=33Ω; typ. /max.

300/600

mA

V_GT

T_vj=25°C; d.c.

min. 3

V

I_GT

T_vj=25°C; d.c.

min. 150

mA

V_GD

T_vj=125°C; d.c.

max. 0.25

V

I_GD

T_vj=125°C; d.c.

max. 6

mA

R_th(j-c)

per thyristor /per module

0.57/0.29

K/W

R_th(c-s)

per thyristor /per module

0.2/0.1

K/W

T_vj

-40-+125

°C

T_stg

-40-+125

°C

V_isol

a.c. 50Hz; r.m.s.; 1s/1min.

3600/3000

V