YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Casa> Elenco prodotti> Pacchetto di plastica a semiconduttore> Transistor di silicio> Transistor NPN BC556 BC557 BC557 BC558 BC558 BC558 BC558 BC558.
Transistor NPN BC556 BC557 BC557 BC558 BC558 BC558 BC558 BC558.
Transistor NPN BC556 BC557 BC557 BC558 BC558 BC558 BC558 BC558.
Transistor NPN BC556 BC557 BC557 BC558 BC558 BC558 BC558 BC558.
Transistor NPN BC556 BC557 BC557 BC558 BC558 BC558 BC558 BC558.
Transistor NPN BC556 BC557 BC557 BC558 BC558 BC558 BC558 BC558.
Transistor NPN BC556 BC557 BC557 BC558 BC558 BC558 BC558 BC558.

Transistor NPN BC556 BC557 BC557 BC558 BC558 BC558 BC558 BC558.

$8.810-99 Others

$7.2≥100Others

Tipo di pagamento:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Trasporti:Ocean,Land
Porta:SHANGHAI
Caratteristiche del prodotto

ModelloYZPST-BC547

Luogo D'origineCina

Collector-Base Voltage50V

Collector-Emitter Voltage45V

Emitter-Base Voltage6V

Collector Current-Continuous0.1A

Collector Power Dissipation625mW

TJ,Tstg:-55~+150℃

Confezionamento e consegna
Unità vendibili : KPCS
Scaricare :
Transistor NPN BC547
Descrizione del prodotto

Transistor incapsulanti in plastica
YZPST-BC546 / BC547 / BC548 Transistor (NPN)
CARATTERISTICHE
Alta tensione
Complemento a BC556, BC557, BC558
YZPST-BC547 TO92


Ordinamento INFORMAZIONE

Part Number Package Packing Method Pack Quantity
BC546 TO-92 Bulk 1000pcs/Bag
BC546-TA TO-92 Tape 2000pcs/Box
BC547 TO-92 Bulk 1000pcs/Bag
BC547-TA TO-92 Tape 2000pcs/Box
BC548 TO-92 Bulk 1000pcs/Bag
BC548-TA TO-92 Tape 2000pcs/Box

MASSIMO Valutazioni ( t a = 25 τ a meno che Altrimenti notato )

Symbol Parameter Value Unit
BC546 80
V CBO Collector-Base Voltage BC547 50 V
BC548 30
BC546 65
V CEO Collector-Emitter Voltage BC547 45 V
BC548 30
BC546 6 V
V EBO Emitter-Base Voltage BC547 6 V
BC548 5 V
IC Collector Current-Continuous 0.1 A
P C Collector Power Dissipation 625 mW
R θ JA Thermal Resistance from Junction to Ambient 200 τ /W
TJ,Tstg Operation Junction  and Storage Temperature Range -55~+150 τ

T a = 25 τ a meno che Altrimenti specificato

ELETTRICO Caratteristiche = 25 τ a meno che Altrimenti

Parameter Symbol Test     conditions Min Typ Max Unit
BC546 80
Collector-base breakdown voltage BC547 V(BR)CBO IC= 0.1mA,IE=0 50 V
BC548 30
BC546 65
Collector-emitter breakdown voltage BC547 V(BR)CEO IC=1mA,IB=0 45 V
BC548 30
BC546 6
Emitter-base breakdown voltage BC547 V(BR)EBO IE=10μA,IC=0 6 V
BC548 5
BC546 VCB=70V,IE=0 0.1 μA
Collector cut-off current BC547 ICBO VCB=50V,IE=0 0.1 μA
BC548 VCB=30V,IE=0 0.1 μA
BC546 VCE=60V,IB=0 0.1 μA
Collector cut-off current BC547 ICEO VCE=45V,IB=0 0.1 μA
BC548 VCE=30V,IB=0 0.1 μA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA
DC current gain * VCE=5V, IC=2mA 110 800
hFE
Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=5mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA,IB=5mA 1.1 V
Base-emitter voltage VBE VCE=5V, IC=2mA 0.58 0.7 V
VCE=5V, IC=10mA 0.75 V
Collector output capacitance Cob VCB=10V,IE=0, f=1MHz 4.5 pF
Transition frequency fT VCE=5V,IC=10mA, f=100MHz 150 MH

A-92 Pacchetto outlin e Dimensioni

Outline Dimensions


Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 3.3 3.7 0.13 0.146
A1 1.1 1.4 0.043 0.055
b 0.38 0.55 0.015 0.022
c 0.36 0.51 0.014 0.02
D 4.3 4.7 0.169 0.185
D1 3.43 0.135
E 4.3 4.7 0.169 0.185
e 1.270 TYP 0.050 TYP
e1 2.44 2.64 0.096 0.104
L 14.1 14.5 0.555 0.571
1.6 0.063
h 0 0.38 0 0.015

Casa> Elenco prodotti> Pacchetto di plastica a semiconduttore> Transistor di silicio> Transistor NPN BC556 BC557 BC557 BC558 BC558 BC558 BC558 BC558.
苏ICP备05018286号-1
Invia domanda
*
*

We will contact you immediately

Fill in more information so that we can get in touch with you faster

Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.

Invia