$4010-49 Piece/Pieces
$38≥50Piece/Pieces
| Tipo di pagamento: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Trasporti: | Ocean,Land,Express,Others |
| Porta: | SHANGHAI |
Modello: YZPST-N2055MC280
marchio: Yzpst
Tipo Di Fornitura: Produttore originale
Materiali Di Riferimento: scheda dati, Foto
Luogo D'origine: Cina
Configurazione: Vettore
Ripartizione Corrente: Non applicabile
Attesa Di Corrente (Ih) (massimo): Non applicabile
Stato Di Spegnimento (massimo): Non applicabile
Numero SCR, Diodo: Non applicabile
Temperatura Di Esercizio: -40 ° C ~ 125 ° C (TJ)
Tipo SCR: Non applicabile
Struttura: Non applicabile
Tensione Attiva: Non applicabile
Trigger Gate Di Tensione (Vgt) (massimo): Non applicabile
Uscita In Corrente (massima): Non applicabile
VRRM: 2800V
VDRM: 2800V
VRSM: 2900V
DV/dt: 500 V/μsec
IT(AV): 2000A
ITRMS: 2000A
I2t: 3.3x106 A2s
IL: 800mA
| Unità vendibili | : | Piece/Pieces |
| Tipo pacchetto | : | 1. Packaging antielettrostatico 2. Casella di cartone 3. Braccia |
| Esempio immagine | : |
|
| Scaricare | : |
|
P/N: YZPST-N2055MC280
|
VRRM(1) |
V DRM(1) |
VRSM(1) |
|
2800 |
2800 |
2900 |
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
10 mA 65 mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
500 V/μsec |
Conduzione - SU stato
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Average value of on-state current | IT(AV) | 2000 | A | Tc=93oC | ||
| RMS value of on-state current | ITRMS | 2000 | A | Nominal value | ||
| Peak one cPSTCle surge | ITSM | 41000 | A | 8.3 msec (60Hz),sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC | ||
| (non repetitive) current | 36000 | A | ||||
| I square t | I2t | 3.3x106 | A2s | 8.3 msec and 10.0 msec | ||
| Latching current | IL | 800 | mA | VD = 24 V; RL= 12 ohms | ||
| Holding current | IH | mA | VD = 24 V; I = 2.5 A | |||
| 400 | ||||||
| Peak on-state voltage | VTM | V | ITM = 2000 A; | |||
| 1.45 | ||||||
| Critical rate of rise of on-state current (5) | di/dt | A/μs | Switching from VDRM < 1000 V, non-repetitive | |||
| 200 |
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Peak gate power dissipation | PGM | 200 | W | tp = 40 us | ||
| Average gate power dissipation | PG(AV) | 5 | W | |||
| Peak gate current | IGM | 10 | A | |||
| Gate current required to trigger all units | IGT | 300 | mA | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC | ||
| 150 | mA | |||||
| 125 | mA | |||||
| Gate voltage required to trigger all units | VGT | 5 | V | VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC | ||
| 0.3 | 3 | V | ||||
| V | ||||||
| Peak negative voltage | VGRM | 5 | V |
Dinamico
| Parameter | Symbol | Min. | Max. | Typ. | Units | Conditions |
| Delay time | td | 1.5 | 0.7 | μs | ITM = 50 A; VD = Rated VDRM | |
| Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 μs; tp = 20 μs | ||||||
| Turn-off time (with VR = -50 V) | 500 | 250 | μs | ITM = 1000 A; di/dt = 25 A/μs; | ||
| VR > -50 V; Re-applied dV/dt = 20 V/μs linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle > 0.01% | ||||||
| Reverse recovery charge | Qrr | μC | ITM = 1000 A; di/dt = 25 A/μs; | |||
| * | VR > -50 V |
YZPST -N2055 MC 280
Numero Di Telefono: 86-514-87782298
Whatsapp: +8613805278321
Azienda Indirizzo: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
sito web: https://it.yzpst.com
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now