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YANGZHOU POSITIONING TECH CO., LTD.
Casa> Elenco prodotti> Dispositivi a disco a semiconduttore (tipo di capsula)> Controllo della fase Thyristor.> Fast Delivery Siemens All Diffused Thyristor High DV / DT
Fast Delivery Siemens All Diffused Thyristor High DV / DT
Fast Delivery Siemens All Diffused Thyristor High DV / DT
Fast Delivery Siemens All Diffused Thyristor High DV / DT
Fast Delivery Siemens All Diffused Thyristor High DV / DT
Fast Delivery Siemens All Diffused Thyristor High DV / DT

Fast Delivery Siemens All Diffused Thyristor High DV / DT

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Tipo di pagamento:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Trasporti:Ocean,Air
Porta:Shanghai
Caratteristiche del prodotto

ModelloYZPST-N1042LS18

marchioYZPST

Descrizione del prodotto
Tiristore Siemens a consegna rapida
YZPST-N1042LS18


Caratteristiche: Configurazione del gate di amplificazione interdigitato . Alta capacità dV / dt . Dispositivo assemblato a pressione. Tutta la struttura diffusa. Tempo di spegnimento massimo garantito .



Fast Delivery Siemens Thyristor YZPST-N1042LS18



Conduzione - sullo stato

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Max. average value of on-state current

IT(AV)M

1042

A

Sinewave,180o conduction,Tc=55oC

RMS value of on-state current

IT(RMS)M

2072

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

  

11.52

kA

kA

8.3 msec (60Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I square t

I2t

661x103

A2s

8.3 msec

Latching current

IL

-

mA

VD = 24 V; RL= 12 ohms

Holding current

IH

-

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

1.75

V

ITM = 1700 A

Critical rate of rise of on-state

current (5, 6)

di/dt

1000

A/ms

Switching from VDRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

500

A/ms

Switching from VDRM £ 1000 V



gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

30

W

Average gate power dissipation

PG(AV)

4

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

300

mA

VD = 10 V;IT=3A;Tj = +25 oC

Gate voltage required to trigger all units

VGT

3.0

V

VD = 10 V;IT=3A;Tj = +25 oC

Peak negative voltage

VRGM

5

V

Dinamico

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

tgd

-

-

ms

VD=67% VDRM, IT=2000A, di/dt=60A/us, IFG=2A, tr=0.5us, Tj=25C

Turn-on time

tgt

-

-

Turn-off time (with VR = -5 V)

tq

-

-

-

ms

ITM=1000A, tp=1000us, di/dt=60A/us, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/us

Reverse recovery current

Irm

-

-

-

A

ITM=4000A, tp=2000us, di/dt=60A/us

CARATTERISTICHE E VALUTAZIONI TERMICHE E MECCANICHE

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+150

oC

Thermal resistance - junction to case

RQ (j-c)

-

-

K/kW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

RQ (c-s)

-

-

K/kW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to case

RQ (j-s)

32

64

K/kW

Double sided cooled

Single sided cooled

Mounting force

F

10

20

-

kN

Weight

W

-

Kg

about

* Superfici di montaggio lisce, piatte e ingrassate

Nota: per il profilo e le dimensioni del caso, vedere il disegno del profilo del caso a pagina 3 di questi dati tecnici



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Fast Delivery Siemens Thyristor YZPST-N1042LS18

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