$268≥20Piece/Pieces
| Tipo di pagamento: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Quantità di ordine minimo: | 20 Piece/Pieces |
| Trasporti: | Ocean,Air |
| Porta: | Shanghai |
Modello: YZPST-KK2000A4000V
marchio: YZPST
| Unità vendibili | : | Piece/Pieces |
| Tipo pacchetto | : | 1. Imballaggio anti-elettrostatico 2. Scatola di cartone 3. Imballaggio protettivo in plastica |
ALTA POTENZA THYRISTOR PER APPLICAZIONI DI CONTROLLO FASE
YZPST-KK2000A4000V
Caratteristiche:
. Tutta la struttura diffusa
. Configurazione interdigitata del gate di amplificazione
. Tempo massimo di consegna garantito
. Elevata capacità dV / dt
. Dispositivo assemblato a pressione
CARATTERISTICHE ELETTRICHE E VALUTAZIONIK ing bloc - Off S tate
|
Device Type |
VRRM (1) |
VDRM (1) |
VRSM (1) |
|
KK2000A |
4000 |
4000 |
4100 |
V RRM = R e p etiti v e p a k r e v e r s e v o lta g e
V DRM = R e p etiti v e p a k o f f s tate v o lta g e
V R S M = N o n r e p etiti v e p a k r e v e r s e v o lta g e (2 )
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
20 mA 200 mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
1000 V/msec |
Co n ducting - on s tate
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Average value of on-state current |
IT(AV) |
|
2000 |
|
A |
Sinewave,180o conduction,Tc=70oC |
|
RMS value of on-state current |
ITRMS |
|
3300 |
|
A |
Nominal value |
|
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
42000
39000 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
5.5x106 |
|
A2s |
8.3 msec |
|
Latching current |
IL |
|
1000 |
|
mA |
VD = 24 V; RL= 12 ohms |
|
Holding current |
IH |
|
500 |
|
mA |
VD = 24 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
2.60 |
|
V |
ITM = 2000 A; Tj = 125 oC |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
800 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
|
Critical rate of rise of on-state current (6) |
di/dt |
|
300 |
|
A/ms |
Switching from VDRM £ 1000 V |
G a ting
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
|
Peak gate current |
IGM |
|
20 |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
300 200 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
|
Gate voltage required to trigger all units |
VGT |
0.30 |
5 4 |
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
|
Peak negative voltage |
VGRM |
|
20 |
|
V |
|
D y na m ic
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
|
Delay time |
td |
|
|
2.0 |
|
ms |
ITM = 50 A; VD = 67% VDRM Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms |
|
Turn-off time (with VR = -5 V) |
tq |
|
|
100 |
|
ms |
ITM > 2000 A; di/dt = 25 A/ms; VR ³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% VDRM ; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
|
Reverse recovery current |
Irr |
|
200 |
|
|
A |
ITM > 2000 A; di/dt = 25 A/ms; VR ³ -50 V; Tj = 125 oC |
CARATTERISTICHE E VALUTAZIONI TERMICHE E MECCANICHE
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.012 |
|
o C/W |
Double sided cooled Single sided cooled |
|
Thermal resistamce - case to sink |
RQ (c-s) |
|
0.002 |
|
o C/W |
Double sided cooled * Single sided cooled * |
|
Mounting force |
P |
8000 35.5 |
10000 44.4 |
|
lb. kN |
|
|
Weight |
W |
|
|
3.5 1.60 |
Lb. Kg. |
|
* M o un ti n g su r f a c es s m oo t h , f lat un n G r e a s ed
N o te : f o r c a s e o u n e TLI a n d d i m e ns i o ns , s ee c a s e o u n e TLI dr a w n g g nel p a g e 3 o f t h è T e c hn ical Dati
|
A: |
84 |
mm |
|
B: |
118 |
mm |
|
C: |
108 |
mm |
|
E: |
36 |
mm |
Numero Di Telefono: 86-514-87782298
Whatsapp: +8613805278321
Azienda Indirizzo: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
sito web: https://it.yzpst.com
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