Tecnologia a tiristore kk fast thyristor 2000V

VRRM (1)

VDRM (1)

VRSM (1)

  2000

  2000

 2100

Repetitive peak reverse leakage and off state leakage

I_{RRM /} I_DRM

15 mA

65 mA (3)

Critical rate of voltage rise

dV/dt (4)

500 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)M

2000

A

Sinewave,180^o conduction,T_c=55^oC

RMS value of on-state current

I_TRMSM

3140

A

Nominal value

Peak one cycle surge

(non repetitive) current

I_TSM

-

14.6

KA

KA

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

1.06x10⁶

A²s

8.3 msec and 10.0 msec

Latching current

I_L

1000

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

500

mA

V_{D =} 24 V; I =2.5 A

Peak on-state voltage

V_TM

2.6

V

I_TM = 4000 A; Duty Cycle £ 0.01%; T_j =25 ^oC

Threshold vlotage

V_T0

-

V

Slope resistance

r_T

-

mΩ

Critical rate of rise of on-state

current (5, 6)

di/dt

800

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

400

A/ms

Switching from V_DRM £ 1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

200

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

5

W

Peak gate current

I_GM

10

A

Gate current required to trigger all units

I_GT

-

150

-

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

-

3

-

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

5

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_d

1.5

0.7

ms

I_TM =50 A; V_D = Rated V_DRM

Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms

Turn-off time (with V_R = -50 V)

t_q

35

ms

I_TM =1000 A; di/dt =25 A/ms;

V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0;

T_j = 125 ^oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Q_rr

*

400

mC

I_TM =1000 A; di/dt =25 A/ms;

V_R ³ -50 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_{Q (j-c)}

23

45

^oC/KW

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

R_{Q (c-s)}

10

20

^oC/KW

Double sided cooled *

Single sided cooled *

Mounting force

P

24.5

26.7

kN

Weight

W

460

g

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