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Casa> Elenco prodotti> Pacchetto di plastica a semiconduttore> BIE Direzioni THIRISTOR (TRIAC)> Sigillanti siliconici transistor BTC24 triac 24amp
Sigillanti siliconici transistor BTC24 triac 24amp
Sigillanti siliconici transistor BTC24 triac 24amp
Sigillanti siliconici transistor BTC24 triac 24amp
Sigillanti siliconici transistor BTC24 triac 24amp
Sigillanti siliconici transistor BTC24 triac 24amp

Sigillanti siliconici transistor BTC24 triac 24amp

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Porta:Shanghai
Caratteristiche del prodotto

ModelloYZPST-BTB24

marchioYZPST

Descrizione del prodotto

Triac

YZPST-BTB24

Triac Ci sono tre modi principali per fissare il tiristore bidirezionale al radiatore: serraggio, bullonatura e chiodatura.


Pacchetto

TO-220AB

Caratteristica principale (Tj = 25 )

Symbol

Value

Unit

IT(RMS)

24

A

VDRM / VRRM

800

V

ITSM

240

A

BTB24 Triac 24amp Transistors

Symbol

Parameter

Value

Unit

IT(RMS)

Rms on-state current(full sine wave)

24

A

ITSM

Non- repetitive Peak on-state

Current (Tj=25℃,tp=20ms)

240

A

I2t

I2t  for fusing(tp=10ms)

200

A2S

IGM

Peak gate current

5

A

VGM

Peak gate voltage

16

V

PGM

Peak gate power

40

W

PG(AV)

Average gate power

1

W

dIT/dt

Repetitive rate of rise of on-state current after triggering
(IT=6A,IG=0.2A,dlG/dt=0.2A/us)

--

50

A/μs

IV

50

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+125













* Resistenze di Thermai


Symbol

Parameter

Condition


Type

Unit

Rth j-c

Thermal Resistance,Junction to case

One cycle

BTA

2.1

℃/W

BTB

1.2

℃/W

Rth j-a

Thermal Resisatance,Junction to ambient

----

--

60

℃/W

* Caratteristiche elettriche (Tj = 25 ℃ se non diversamente specificato)

Symbol

Conditions

Type

Max

Unit

IGT

 

  BTB24

VD=12V  IT=0.1A

   T2+ G+

   T2+ G-

   T2- G-



11

15

20



18

30

30



mA

mA

mA

IH

VD=12V IGT=0.1A


50

mA

VTM

IT=24A

-1.25-

1.5

V

I DRM

V DRM=800V


10

μA

IRRM

VRRM=800V


15

μA

VGT

VD=12V  IT=0.1A

Tj=125℃

--


1.5

V

ID

VD=VDRM(MAX)

Tj=125℃

--

0.5

mA


* Caratteristiche dinamiche ( Tj = 25 se non diversamente indicato )

Symbol

Test Conditions

Type

Min

Max

Unit

dV/dt


VDM=67%VDm(MAX)

Tj=125℃

500


250



--



V/μs

(dV/dt)c

(dI/dt)c=7A/ms  Tj=125℃


--


10




μs

Triac YZPST-BTB24 Triac YZPST-BTB24
Casa> Elenco prodotti> Pacchetto di plastica a semiconduttore> BIE Direzioni THIRISTOR (TRIAC)> Sigillanti siliconici transistor BTC24 triac 24amp
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