TO202-3 X0402 SCR livelli di attivazione altamente sensibili

Parameter

Symbol

Value

Unit

Storage junction temperature range

Tstg

-40 ~150

℃

Operating junction temperature range

Tj

-40~125

℃

Repetitive peak off-state voltage (T =25℃)

V_DRM

600

V

Repetitive peak reverse voltage (T =25℃)

V_RRM

600

V

Non repetitive surge peak Off-state voltage

V_DSM

V_DRM +100

V

Non repetitive peak reverse voltage

V_RSM

V_RRM +100

V

RMS on-state current (T =60℃)

I_T(RMS)

4.0

A

Non repetitive surge peak on-state current

(180° conduction angle, F=50Hz)

I_TSM

30

A

Average on-state current (180° conduction angle)

I_T(AV)

2.5

A

I²t value for fusing (tp=10ms)

I²t

4.5

A²S

Critical rate of rise of on-state current

(I =2×IGT, tr ≤ 100 ns)

dI/dt

50

A/μS

Peak gate current

I_GM

1.2

A

Average gate power dissipation

P_G(AV)

0.2

W