YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Casa> Elenco prodotti> Pacchetto di plastica a semiconduttore> BIE Direzioni THIRISTOR (TRIAC)> 600V BTA316X-600B TO-220F 16A TRIAC
600V BTA316X-600B TO-220F 16A TRIAC
600V BTA316X-600B TO-220F 16A TRIAC
600V BTA316X-600B TO-220F 16A TRIAC
600V BTA316X-600B TO-220F 16A TRIAC
600V BTA316X-600B TO-220F 16A TRIAC
600V BTA316X-600B TO-220F 16A TRIAC

600V BTA316X-600B TO-220F 16A TRIAC

$0.164000-19999 Piece/Pieces

$0.14≥20000Piece/Pieces

Tipo di pagamento:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Trasporti:Ocean,Land,Express,Others
Porta:SHANGHAI
Caratteristiche del prodotto

ModelloYZPST-BTA316X-600B

marchioYzpst

Place Of OriginChina

IT(RMS)16A

VDRM600V

VRRM600V

ITSM160A

I2t140A2S

IGM4A

VGM16V

PGM40W

PG(AV)1W

Confezionamento e consegna
Unità vendibili : Piece/Pieces
Tipo pacchetto : 1. Packaging antielettrostatico 2. Casella di cartone 3. Braccia
Scaricare :
TRIAC BTA316X-600B to220F
Descrizione del prodotto

YZPST-BTA316X-600C

16A 600V BTA316X-600C TO-220F TRIAC

Pacchetto
To-220f

YZPST-BTA316-600B
Funzione principale (TJ = 25 ℃)

Symbol Value Unit
IT(RMS) 16 A
VDRM   / VRRM 800 V
ITSM 160 A

Assoluto Valutazioni ( limitanti Valori )

Symbol Parameter Value Unit
IT (RMS) Rms on-state current(full sine wave) 16 A
Non- repetitive Peak on-state
ITSM Current (Tj=25,tp=20ms) 160 A
I2t I2   for fusing(tp=10ms) 140 A2S
IGM Peak gate current 4 A
VGM Peak gate voltage 16 V
PGM Peak gate power 40 W
PG(AV) Average gate power 1 W
dIT/dt Repetitive rate of rise of on-state current after triggering - 50
(IT=6A,IG =0.2A,dlG/dt=0.2A/us) 50 A/μs
Tstg Storage temperature 110
Tj Operating junction temperature 85

Resistenze Thermai

Symbol Parameter Condition Type Unit
Rth j-c Thermal Resistance,Junction to case One cycle 220F 1.2 /W
Rth j-a Thermal Resisatance,Junction to ambient —— —— 60 /W

Elettrico caratteristiche ( TJ = 25a meno che Altrimenti dichiarato )

Symbol Test Conditions Type Max Unit
BTA316-800 C B
VD=12V    IT=0.1A
T2+ G+ 11 16 25 mA
IGT T2+ G- 12 20 30 mA
T2- G- 18 25 50 mA
T2- G+ mA
IH VD=12V IGT=0.1A 25 50 mA
VTM IT=20A — 1.3 1.7 V
DRM DRM=520V 10 μA
IRRM VRRM=520V 15 μA
VD=12V    IT=0.1A
VGT Tj=125 —— 1.65 V
VD=VDRMMAX
ID Tj=125 —— 0.5 mA

Misura di Pacchetto To-263 :

YZPST-BTA316-600B TO-220F

苏ICP备05018286号-1
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