Modello: YZPST-SS044N10AP
marchio: Yzpst
Applicazione: Microfono, Non applicabile
Tipo Di Fornitura: Produttore originale
Materiali Di Riferimento: scheda dati, Foto
Tipo Di Pacchetto: Montaggio superficiale
Metodo Di Installazione: Non applicabile
Funzione FET: Non applicabile
Configurazione: Non applicabile
VDSS: 100V
ID: 135A
IDM: 520A
VGSS: ±20V
EAS: 780mJ
PD: 208W
| Unità vendibili | : | Piece/Pieces |
| Tipo pacchetto | : | 1. Packaging antielettrostatico 2. Casella di cartone 3. Braccia |
| Scaricare | : |
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Device Ordering Marking Packing Information |
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Ordering Number |
Package |
Marking |
Packing |
|
SS044N10AP |
TO-220 |
YZPST SS044N10AP |
Tube |
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Absolute Maximum Ratings TC = 25ºC, unless otherwise noted |
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Parameter |
Symbol |
Value |
Unit |
|
TO-220 |
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|
Drain-Source Voltage (VGS = 0V) |
VDSS |
100 |
V |
|
Continuous Drain Current |
ID |
135 |
A |
|
Pulsed Drain Current (note1) |
IDM |
520 |
A |
|
Gate-Source Voltage |
VGSS |
±20 |
V |
|
Single Pulse Avalanche Energy (note2) |
EAS |
780 |
mJ |
|
Power Dissipation (TC = 25ºC) |
PD |
208 |
W |
|
Operating Junction and Storage Temperature Range |
TJ, Tstg |
-55~+150 |
ºC |
|
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. |
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Thermal Resistance |
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Parameter |
Symbol |
Value |
Unit |
|
TO-220 |
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Thermal Resistance, Junction-to-Case |
RthJC |
0.60 |
ºC/W |
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Thermal Resistance, Junction-to-Ambient |
RthJA |
62.5 |
|
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Specifications TJ = 25ºC, unless otherwise noted |
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Parameter |
Symbol |
Test Conditions |
Value |
Unit |
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Min. |
Typ. |
Max. |
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Static |
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Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
100 |
-- |
-- |
V |
|
Zero Gate Voltage Drain Current |
IDSS |
VDS =100, VGS = 0V, TJ = 25ºC |
-- |
-- |
1.0 |
μA |
|
Gate-Source Leakage |
IGSS |
VGS = ±20V |
-- |
-- |
±100 |
nA |
|
Gate-Source Threshold Voltage |
VGS(th) |
VDS = 250µA |
2.0 |
-- |
4.0 |
V |
|
Drain-Source On-Resistance (Note3) |
RDS(on) |
VGS = 10V, ID =50A |
-- |
3.6 |
4.4 |
mΩ |
|
Dynamic |
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Input Capacitance |
Ciss |
VGS = 0V, VDS = 50V, f = 1.0MHz |
-- |
7300 |
-- |
pF |
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Output Capacitance |
Coss |
-- |
850 |
-- |
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Reverse Transfer Capacitance |
Crss |
-- |
25 |
-- |
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Total Gate Charge |
Qg |
VDD = 50V, ID = 20A, VGS = 10V |
-- |
114 |
-- |
nC |
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Gate-Source Charge |
Qgs |
-- |
37 |
-- |
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Gate-Drain Charge |
Qgd |
-- |
26 |
-- |
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Turn-on Delay Time |
td(on) |
VDD = 50V, ID =50A,VGS = 10V RG =3.0 Ω |
-- |
32 |
-- |
ns |
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Turn-on Rise Time |
tr |
-- |
50 |
-- |
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Turn-off Delay Time |
td(off) |
-- |
83 |
-- |
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Turn-off Fall Time |
tf |
-- |
30 |
-- |
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Drain-Source Body Diode Characteristics |
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Continuous Body Diode Current |
IS |
TC = 25 ºC |
-- |
-- |
135 |
A |
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Pulsed Diode Forward Current |
ISM |
-- |
-- |
520 |
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Body Diode Voltage |
VSD |
TJ = 25ºC, ISD = 50A, VGS = 0V |
-- |
0.9 |
1.2 |
V |
|
Reverse Recovery Time |
trr |
VGS = 0V,IS = 50A, diF/dt =500A /μs |
-- |
75 |
-- |
ns |
|
Reverse Recovery Charge |
Qrr |
-- |
160 |
-- |
nC |
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Appunti
1. ripetitivo Valutazione: Larghezza del polso limitato di temperatura di giunzione massima
2. v dd = 50V, R g = 25 Ω , Di partenza T j = 25 ºC
3. Test del polso: Impulso larghezza ≤ 300μs, Dovere Ciclo ≤ 1%
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