SS8550 TO-92 Transistor incapsulati in plastica NPN
$9.550-499 Others
$8≥500Others
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land |
Porta: | SHANGHAI |
$9.550-499 Others
$8≥500Others
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land |
Porta: | SHANGHAI |
Modello: YZPST-SS8550
marchio: Yzpst
Luogo D'origine: Cina
Package: TO-92
VCBO: -40V
VCEO: -25V
Vebo: -5v
CIRCUITO INTEGRATO: -1.5a
PD: 1000mW
R θ JA: 125℃ / W
TJ,Tstg: -55 -+150℃
Unità vendibili | : | K pcs |
Tipo pacchetto | : | 1. Imballaggio antielettrostatico 2. Casella di cartone 3. Braccia |
Scaricare | : |
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PC: 1W (TA = 25 ℃)
O rder i ng I nf o rmat i o n
PartNumber |
Package |
PackingMethod |
PackQuantity |
SS8550 |
TO-92 |
Bulk |
1000pcs/Bag |
SS8550-TA |
T0-92 |
Tape |
2000pcs/Box |
Max 1 mamma Ratto 1 ngs ( T a = 25 ℃ a meno che altrimenti notato )
symbol |
Parameter |
Value |
Unit |
VCBO |
Collector-Base Voltage |
-40 |
V |
VCEO |
Collector-Emitter Voltage |
-25 |
V |
VEBO |
Emitter-Base Voltage |
-5 |
V |
IC |
Collector Current -Continuous |
- 1.5 |
A |
PD |
Collector Power Dissipation |
1000 |
mW |
R θ JA |
Thermal Resistance f rom Junction to Ambient |
125 |
℃ / W |
TJ,Tstg |
Operation Junction and Storage Temperature Range |
-55 -+150 |
℃ |
T a = 25 ℃ se non diversamente specificato
Parameter | symbol | Test | Min | Typ | Max | Unit |
conditions | ||||||
Collector.base | V(BR)CBO | IC=- 100uA, IE=0 | -40 | V | ||
breakdown | ||||||
voltage | ||||||
Collector.emitter | V(BR)CEO | IC=-0. 1mA, IB=0 | -25 | V | ||
breakdown voltage | ||||||
Emitter.base | V(BR)EBO | IE=- 100uA, IC=0 | -5 | V | ||
breakdown | ||||||
voltage | ||||||
Collector | ICBO | VCB=-40V, IE=0 | -0. 1 | uA | ||
cut.off | ||||||
current | ||||||
Emitter | ICEO | VCE=-20V, IE=0 | -0. 1 | uA | ||
cut.off | ||||||
current | ||||||
Emitter | IEBO | VEB=-5V, IC=0 | -0. 1 | uA | ||
cut.off | ||||||
current | ||||||
DC | hFE(1) | VCE=- 1V, IC=- 100mA | 85 | 400 | ||
current | ||||||
gain | hFE(2) | VCE=- 1V, IC=-800mA | 40 | |||
Collector.emitter | VCE(sat) | IC=-800mA, IB=-80mA | -0.5 | V | ||
saturation | ||||||
voltage | ||||||
Base.emitter | VBE(sat) | IC=-800mA, IB=-80mA | -1.2 | V | ||
saturation voltage | ||||||
Base.emitter | VBE(on) | VCE=- 1V, IC=- 10mA | -1 | V | ||
voltage | ||||||
out | Cob | VCB=- 10V, IE=0mA,f=1MHZ | 20 | pF | ||
capacitance | ||||||
Transition | fT | VCE=- 10V, IC=-50mA,f=30MHZ | 100 | MHz | ||
frequency |
A. _ 92 pacchetto contorno Dimensioni
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