Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

20

V

Collector-Emitter Voltage

VCEO

11

V

Emitter-base voltage

VEBO

3

V

Collector Current

IC

50

mA

Collector power dissipation

PC

0.2

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-55~+150

°C

Parameter

Symbol

Min.

Typ

Max.

Unit

Conditions

Collector-base breakdown voltage

BVCBO

20

-

-

V

IC=10mA

Collector-emitter breakdown voltage

BVCEO

11

-

-

V

IC=1mA

Emitter-base breakdown voltage

BVEBO

3

-

-

V

IE=10mA

Collector cutoff current

ICBO

-

-

0.5

mA

VCB=10V

Emitter cutoff current

IEBO

-

-

0.5

mA

VEB=2V

Collector-emitter saturation voltage

VCE(sat)

-

-

0.5

V

IC/IB=10mA/5mA

DC current transfer ratio

hFE

56

-

120

-

VCE/IC=10V/5mA

Transition frequency

fT

1.4

3.2

-

GHz

VCE=10V, IE=-10mA, f=500MHz

Output capacitance

Cob

-

0.8

1.5

pF

VCB=10V, IE=0A, f=1MHz

Collector-base time constant

rbb`Cc

-

4

12

ps

VCB=10V, IC=10mA, f=31.8MHz

Noise factor

NF

-

3.5

-

dB

VCE=6V, IC=2mA, f=500MHz,Rg=50W