Creazione DV/DT elevata a-92 0,8a SCR
$39200-1999 Others
$32≥2000Others
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
$39200-1999 Others
$32≥2000Others
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
Modello: YZPST-BT169 10-30UA
marchio: Yzpst
Luogo D'origine: Cina
LT(RMS): 0.8A
VTM: <1.5V
Tstg: -40~150℃
Tj: -40~110℃
LTSM: 10A
L2t: 0.5A2s
Dl/dt: 50A/μs
Unità vendibili | : | 1000 pieces |
Tipo pacchetto | : | 1. Packaging antielettrostatico 2. Casella di cartone 3. Braccia |
Scaricare | : |
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YZPST-BT169 Scr
DESCRIZIONE:
La serie BT 1 6 9 SCR fornisce una velocità DV/DT elevata
con una forte resistenza all'interfaccia elettromagnetica.
Sono particolarmente raccomandati per l'uso sull'interruttore di corrente residua, i capelli lisci, l'accenditore ecc.
PRINCIPALE CARATTERISTICHE:
symboI |
vaIue |
unit |
lT(RMS) |
0.8 |
A |
VDRM/VRRM |
400/600/800 |
V |
VTM |
<1.5 |
V |
ASSOLUTO MASSIMO GIUDIZI:
Parameter |
SymboI |
vaIue |
Unit |
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
operating junction temperature range |
Tj |
-40~110 |
℃ |
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
400/600/800 |
V |
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
400/600/800 |
V |
RMS on-state current (Tc=80℃) |
lT(RMS) |
0.8 |
A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
lTSM |
10 |
A |
l2t value for fusing (tp=10ms) |
l2t |
0.5 |
A2s |
critical rate of rise of on-state current (lG=2xlGT) |
dl/dt |
50 |
A/μs |
Peak gate current |
lGM |
0.2 |
A |
Average gate power dissipation |
PG(AV) |
0.1 |
W |
Peak gate power |
PGM |
0.5 |
W |
CARATTERISTICHE ELETTRICHE (TJ = 25k se non diversamente specificato)
SymboI | vaIue | ||||
Test Condition | MlN | TYPE | MAX | unit | |
lGT | - | 20 | 200 | μA | |
VGT | VD=12V, RL=33Ω | - | 0.5 | 1 | V |
VD=VDRM Tj=110K | |||||
VGD | RL=3.3KΩ | 0.2 | - | - | V |
lH | lT=50mA | - | - | 2 | mA |
lL | lG=1.2lGT | - | - | 3 | mA |
VD=0.66XVDRM Tj=110K | |||||
dV/dt | G RGK=1KΩ | 20 | - | - | V/μs |
Caratteristiche statiche
SymboI | Test Condition | vaIue | unit | ||
VTM | lTM=2A tp=380μs | Tj=25℃ | MAX | 1.5 | V |
lDRM | VDRM= VRRM | Tj=25℃ | 5 | μA | |
lRRM | RGK=1KΩ | Tj=110℃ | MAX | 100 | μA |
PACCHETTO MECCANICO DATI
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