Prezzo transistor di potenza transistor SCR con ottimo prezzo
Ottieni l'ultimo prezzoTipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Air |
Porta: | Shanghai |
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Air |
Porta: | Shanghai |
Modello: YZPST-1690-TO-247S
marchio: YZPST
Tipo pacchetto | : | 1. Imballaggio anti-elettrostatico 2. Scatola di cartone 3. Imballaggio protettivo in plastica |
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YZPST-1690-to-247S
D E SCRI P TI O N:
PS T1 6 9 0 s e r i e s o f si l icona c o n trolled rec f IERS t I, W-esima h i h g ab i l ità t o con h e d t h e s h o ck l o a d i n g o g gag c u r r en t, p ro v ide h i g h d v / d t Vota w ith s t r sul g resistere un ce a e lec t r o m a g ne tic i n t e r f e re n z. Th e y un re e s p e cialmente rec o mm en d e d f o r uso o n s o l i d a te rela y , mo t o rc y cle, po w e r c ha r g e r , T - t oo ls e tcPrezzo transistor di potenza transistor SCR con ottimo prezzo
A B S O L U TE MA X I MU M R A TINGS
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40-150 |
℃ |
Operating junction temperature range |
Tj |
-40-125 |
℃ |
Repetitive peak off-state voltage |
VDRM |
1600 |
V |
Repetitive peak reverse voltage |
VRRM |
1600 |
V |
Average on-state current (TC=80℃) |
IT(AV) |
56 |
A |
RMS on-state current(TC=80℃) |
IT(RMS) |
90 |
A |
Non repetitive surge peak on-state current (tp=10ms) |
ITSM |
1250 |
A |
I2t value for fusing (tp=10ms) |
I2t |
7800 |
A2s |
Critical rate of rise of on-state current (IG=2×IGT) |
dI/dt |
150 |
A/μs |
Peak gate current |
IGM |
10 |
A |
Peak gate power |
PGM |
20 |
W |
Average gate power dissipation(Tj=125℃) |
PG(AV) |
2 |
W |
E L E C TRICAL CH A R A CTERI S TICS ( T j = 25 ℃ u n meno o T E w ise r s pe ci f i e d )
Symbol |
Test Condition |
Value |
Unit |
||
MIN. |
TYP. |
MAX. |
|||
IGT |
VD=12V RL=30Ω |
10 |
- |
80 |
mA |
VGT |
- |
- |
1.5 |
V |
|
VGD |
VD=VDRM Tj=125℃ |
0.25 |
- |
- |
V |
IL |
IG=1.2 IGT |
- |
- |
200 |
mA |
IH |
IT=1A |
- |
- |
150 |
mA |
dV/dt |
VD=2/3VDRM Tj=125℃ Gate Open |
1000 |
- |
- |
V/μs |
S TA TIC C H A RA CTERI S TICS
Symbol |
Parameter |
Value(MAX) |
Unit |
|
VTM |
ITM=110A tp=380μs |
TC=25℃ |
1.8 |
V |
IDRM |
VD=VDRM VR=VRRM |
TC=25℃ |
50 |
μA |
IRRM |
TC=125℃ |
10 |
mA |
TERMICO R E S I S T AN CE S
Symbol |
Parameter |
Value |
Unit |
Rth(j-c) |
junction to case(DC) |
0.27 |
℃/W |
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