Dispositivi a semiconduttore DCR504 Power Thyristor

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)

300

A

Sinewave,180^o conduction,T_c=65^oC

RMS value of on-state current

I_TRMS

480

A

Nominal value

Peak one cycle surge

(non repetitive) current

I_TSM

4200

4400

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

68000

A²s

8.3 msec

Latching current

I_L

300

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

200

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

2.98

V

I_TM = 1500 A; Tj = 25 ^oC

Critical rate of rise of on-state

current (5, 6)

di/dt

300

A/ms

Switching from V_DRM£ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

150

A/ms

Switching from V_DRM£ 1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_{Q (j-c)}

0.095

^oC/W

Double sided cooled

Thermal resistamce - case to sink

R_{Q (c-s)}

0.06

^oC/W

Double sided cooled *

Mounting force

P

3.2

3.9

kN

Weight

W

57

g.