$0.165000-9999 Piece/Pieces
$0.14≥10000Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Air,Others |
Porta: | SHANGHAI |
$0.165000-9999 Piece/Pieces
$0.14≥10000Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Air,Others |
Porta: | SHANGHAI |
Modello: YZPST-BTB16-800B
marchio: Yzpst
Luogo D'origine: Cina
IT(RMS): 16A
VDRM: 800V
VRRM: 800V
VTM: ≤ 1.5v
Tstg: -40~150℃
TJ: -40 ~ 125 ℃
ITSM: 160A
I2t: 128A2s
DI/dt: 50A/μs
Unità vendibili | : | Piece/Pieces |
Tipo pacchetto | : | 1. Packaging antielettrostatico 2. Casella di cartone 3. Braccia |
Scaricare | : |
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YZPST-BTB16-800B 800V BTB16-800B 16A TRIAC
BTA 1 6/ BTB 16 (Bt 13 9) Serie 16 Atriacs
Descrizione :Con l'elevata capacità di resistere al carico di shock di una grande corrente, i triaci della serie BTA16/BTB16 forniscono un elevato tasso DV/DT con una forte resistenza all'interfaccia elettromagnetica.
Con alte prestazioni di commutazione, 3 quadranti produttori in particolare raccomandati per l'uso sul carico induttivo. Da tutti e tre i terminali al dissipatore di calore esterno, BTA16 fornisce una tensione di isolamento nominale di 2500 VRMS conforme agli standard UL
Caratteristiche principali :
symbol |
value |
unit |
IT(RMS) |
16 |
A |
VDRM/VRRM |
600/800/ 1200 |
V |
VTM |
≤ 1.5 |
V |
Valutazioni massime assolute :
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
Operating junction temperature range |
Tj |
-40~125 |
℃ |
Repetitive peak off-state voltage (Tj=25C) |
VDRM |
600/800/ 1200 |
V |
Repetitive peak reverse voltage (Tj=25C) |
VRRM |
600/800/ 1200 |
V |
RMS on-state current |
IT(RMS) |
16 |
A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM
|
160
|
A
|
I2t value for fusing (tp=10ms) |
I2t |
128 |
A2s |
Critical rate of rise of on-state current(IG=2× IGT) |
dI/dt |
50 |
A/μs |
Peak gate current |
IGM |
4 |
A |
Average gate power dissipation |
PG(AV) |
1 |
W |
Peak gate power |
PGM |
5 |
W |
Caratteristiche elettriche (TJ = 25C se non diversamente specificato)
3 quadranti :
Parameter | Value | |||||||
Test Condition | Quadrant | TW | SW | CW | BW | Unit | ||
IGT | VD=12V, | 5 | 10 | 35 | 50 | A | ||
VGT | RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.3 | V | |||
VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ | MIN | 0 2 | V | |||
IH | IT=100mA | MAX | 15 | 25 | 40 | 60 | A | |
Ⅰ-Ⅲ | 20 | 30 | 50 | 70 | m | |||
IL | IG=1.2IGT | Ⅱ | MAX | 25 | 40 | 60 | 90 | A |
VD=2/3VDRM Tj=125C Gate open | ||||||||
dV/dt | MIN | 100 | 200 | 500 | 1000 | V/µs |
4 quadranti :
Parameter | Value | |||||
Test Condition | Quadrant | C | B | Unit | ||
Ⅰ- Ⅱ-Ⅲ | 25 | 50 | A | |||
IGT | VD=12V, | Ⅳ | 50 | 70 | A | |
VGT | RL=33Ω | ALL | MAX | 1.5 | V | |
VGD | VD=VDRM | ALL | MIN | 0.2 | V | |
IH | IT=100mA | MAX | 40 | 60 | A | |
Ⅰ-Ⅲ- Ⅳ | 50 | 70 | m | |||
IL | IG=1.2IGT | Ⅱ | MAX | 70 | 90 | A |
VD=2/3VDRM Tj=125C Gate open | ||||||
dV/dt | MIN | 200 | 500 | V/µs |
Caratteristiche statiche
Symbol | Test Condition | Value | Unit | ||
VTM | ITM=22.5A tp=380μs | Tj=25C | MAX | 1.5 | V |
IDRM | Tj=25C | 5 | A | ||
IRRM | VDRM= VRRM | Tj=125C | MAX | 1 | A |
Resistenze termiche
Symbol | Test Condition | Value | Unit | |
Rth(j-c) | TO-220A(Ins) | 2.1 | ℃/W | |
TO-220B(Non-Ins) | 1.3 | |||
TO-220F(Ins) | 2.3 | |||
junction to case(AC) | TO-263 | 2.4 |
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