12A 800V BT138-800E TO-220C TRIAC con corrente di attesa e di boccone bassa
$0.13600-19999 Piece/Pieces
$0.1≥20000Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Air |
Porta: | SHANGHAI |
$0.13600-19999 Piece/Pieces
$0.1≥20000Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Air |
Porta: | SHANGHAI |
Modello: YZPST-BT138-800E
marchio: Yzpst
Luogo D'origine: Cina
IT(RMS): 12A
VDRM/VRRM: 600/800V
VTM: ≤1.6V
Tstg: -40~150℃
TJ: -40 ~ 125 ℃
ITSM: 120A
I2t: 45A2s
Unità vendibili | : | Piece/Pieces |
Tipo pacchetto | : | 1. Packaging antielettrostatico 2. Casella di cartone 3. Braccia |
Esempio immagine | : | |
Scaricare | : |
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Serie BT138 12a triaci
YZPST-BT138-800E
DESCRIZIONE
Con corrente di tenuta bassa e di aggancio, BT138
I triaci della serie sono particolarmente raccomandati per
Utilizzare sulla potenza del tipo di resistenza medio e piccolo
carico.
PRINCIPALE CARATTERISTICHE:
symbol |
value |
unit |
IT(RMS) |
12 |
A |
VDRM/VRRM |
600/800 |
V |
VTM |
≤1.6 |
V |
ASSOLUTO MASSIMO GIUDIZI:
Parameter |
Symbol |
Value |
Unit |
Storage junction temperature range |
Tstg |
-40~150 |
℃ |
Operating junction temperature range |
Tj |
-40~125 |
℃ |
Repetitive peak off-state voltage (Tj=25℃) |
VDRM |
600/800 |
V |
Repetitive peak reverse voltage (Tj=25℃) |
VRRM |
600/800 |
V |
RMS on-state current |
IT(RMS) |
12 |
A |
Non repetitive surge peak on-state current (full cycle, F=50Hz) |
ITSM |
120 |
A |
I2t value for fusing (tp=10ms) |
I2t |
45 |
A2s |
Critical rate of rise of on-state current (IG=2 × IGT) | Ⅰ- Ⅱ-Ⅲ | 50 | ||
dI/dt | Ⅳ | 10 | A/ μs | |
Peak gate current | IGM | 2 | A | |
Average gate power dissipation | PG(AV) | 0.5 | W | |
Peak gate power | PGM | 5 | W |
Caratteristiche elettriche (TJ = 25 ℃ se non diversamente specificato)
3 quadranti :
Parameter | Value | ||||||
Test Condition | Quadrant | SW | CW | BW | Unit | ||
IGT | 10 | 35 | 50 | mA | |||
VGT | VD=12V, RL=33Ω | Ⅰ- Ⅱ-Ⅲ | MAX | 1.3 | V | ||
VGD | VD=VDRM Tj=125℃ | Ⅰ- Ⅱ-Ⅲ | MIN | 0.2 | V | ||
IH | IT=100mA | MAX | 10 | 40 | 60 | mA | |
Ⅰ-Ⅲ | 30 | 50 | 70 | ||||
IL | IG=1.2IGT | Ⅱ | MAX | 40 | 60 | 80 | mA |
VD=2/3VDRM Tj=125℃ | |||||||
dV/dt | Gate open | MIN | 200 | 500 | 1000 | V/ µs |
4 quadranti :
Parameter | Value | |||||||
Test Condition | Quadrant | D | E | F | G | Unit | ||
Ⅰ- Ⅱ-Ⅲ | 5 | 10 | 25 | 50 | ||||
IGT | Ⅳ | 10 | 25 | 70 | 100 | mA | ||
VGT | VD=12V, RL=33Ω | Ⅰ- Ⅱ-Ⅲ-Ⅳ | MAX | 1.3 | V | |||
VGD | VD=VDRM | Ⅰ- Ⅱ-Ⅲ-Ⅳ | MIN | 0.2 | V | |||
IH | IT=100mA | MAX | 10 | 20 | 40 | 60 | mA |
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