Driver led dimmerabile triac SG50AA20

$4.5≥1000Piece/Pieces

Tipo di pagamento:	L/C,T/T,Paypal
Incoterm:	FOB,CFR,CIF
Quantità di ordine minimo:	1000 Piece/Pieces
Trasporti:	Ocean,Air
Porta:	Shanghai

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Descrizione del prodotto

Caratteristiche del prodotto

Confezionamento e consegna

Descrizione del prodotto

Caratteristiche del prodotto

Modello: YZPST-SG50AA120

marchio: YZPST

Confezionamento e consegna

Unità vendibili	:	Piece/Pieces
Tipo pacchetto	:	1. Imballaggio anti-elettrostatico 2. Scatola di cartone 3. Imballaggio protettivo in plastica

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Descrizione del prodotto

Triac YZPST-SG50AA120

Driver led dimmerabile triac SG50AA20

TRIAC (TIPO ISOLATO)

SG50AA sono triac modellati isolati adatti per un'ampia gamma di applicazioni come copiatrice, forno a microonde, interruttore a stato solido, controllo motore, controllo luci e controllo riscaldatore.

● IT (AV) 50A

● Elevata capacità di sovratensione 330 A

● Terminali Tab

Triac SG50AA (2) Triac SG50AA (1)

Symbol

Item

Unit

SG50AA80

SG50AA120

SG50AA160

VDRM

Repetitive Peak Off-State Voltage

800

1200

1600

Symbol	Item	Conditions	Ratings	Unit
IT(RMS)	R.M.S. On-State Current	Tc=58℃	50	A
ITSM	Surge On-State Current	One cycle, 50Hz/60Hz, peak, non-repetitive	450	A
I2t	I2t	Value for one cycle of surge current	730	A2S
PGM	Peak Gate Power Dissipation		10	W
PG(AV)	Average Gate Power Dissipation		1	W
IGM	Peak Gate Current		3	A
VGM	Peak Gate Voltage		10	V
di/dt	Critical Rate of Rise of On-State Current	IG=100mA,Tj=25℃,VD=1/2VDRM,	100	A/μs
Tj	Operating Junction Temperature		-25 to +125	℃
Tstg	Storage Temperature		-40 to +125	℃
	Mounting Torque(M4)	Recommended Value 1.0-1.4(10-14)	1.5(15)	N.m
	Mass	Typical value	2	g

Electric a l C h ara c t e ristics

Symbol	Item		Conditions	Ratings	Unit
IDRM	Reptitive Peak Off-State Current, max		VD=VDRM, Single phase, half wave, Tj=125℃	5	mA
VTM	Peak On-State Voltage, max		On-State Current [√ 2 × IT ( RMS )], Inst. measurement	1.4	V
I + GT1	1	Gate Trigger Current, max	Tj=25℃,IT=1A,VD=6V	80	mA
I -GT1	2		Tj=25℃,IT=1A,VD=6V	80
I + GT3	3			-
I -GT3	4		Tj=25℃,IT=1A,VD=6V	80
V+ GT1	1	Gate Trigger Voltage, max	Tj=25℃,IT=1A,VD=6V	3	V
V-GT1	2		Tj=25℃,IT=1A,VD=6V	3
V+ GT3	3			-
V-GT3	4		Tj=25℃,IT=1A,VD=6V	3
VGD	Non-Trigger Gate Voltage, min		Tj=125℃,VD=1/2VDRM	0.2	V
tgt	Turn On Time, max.		IT(RMS),IG=100mA,VD=1/2VDRM,Tj =25℃,dIG/dt=1A/μs	10	V
dv/dt	Critical Rate of Rise on-State Voltage,min.		Tj=125℃,VD=2/3VDRM,Exoponential wave.	300	V/μs
dv/dt]c	Critical Rate of Rise off-State Voltage at commutation, min		Tj=125℃,VD=2/3VDRM,[di/dt]c=15A/ms	200	V/μs
IH	Holding Current, typ.		Tj=25℃	30	mA
Rth(j-c)	Thermal Impedance, max		Junction to case	1.5	℃/W