Un moncamento a vite da 800 V Modulo tiristore
$10.51-19 Piece/Pieces
$7.5≥20Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Air |
Porta: | SHANGHAI |
$10.51-19 Piece/Pieces
$7.5≥20Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Air |
Porta: | SHANGHAI |
Modello: YZPST-SK70KQ08
marchio: Yzpst
Applicazione: Alta frequenza, Specchio corrente
Tipo Di Fornitura: Produttore originale, ODM, Agenzia, altro
Materiali Di Riferimento: scheda dati, Foto, altro
Tipo Di Pacchetto: Montaggio superficiale, Bucato
Metodo Di Installazione: Attraverso il foro, Montaggio superficiale
Funzione FET: Carburo di silicio (SiC), Standard, Super Junction, GaNFET (nitruro di gallio), Non applicabile
Configurazione: Single, Tipo T., Interruttore singolo, Non applicabile
VRRM/VDRM TVJ = 125 ℃: 800v
VRSM/VDSM TVJ = 125 ℃: 900v
IRRM/IDRM TVJ = 125 ℃: 5 ma
It (av) Tc = 85 ℃: 55a
It (RMS) TC = 85 ℃, Sin180 °: 80a
ITSM 10ms, TJ = 25 ℃: 1100a
I2t: 6050a2s
VTM: 1.7V
Unità vendibili | : | Piece/Pieces |
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A norma RoHS
Funzionalità del prodotto S.
Design compatto
Un montaggio a vite
Trasferimento di calore e isolamento tramite DBC
Passivazione del vetro Chipstor Chips
Corrente di dispersione bassa
App li Cat i su s
Antipasti morbidi
Controllo della temperatura
Controllo della luce
A bs o l u te m a x i m u m r a t i ng s ( tc = 25 ° C se non diversamente specificato)
Symbol | Parameter | Test Conditions | Values | Unit |
VRRM | Maximum Repetitive Reverse Voltage | Tvj=125℃ | 800 | V |
VDRM | Maximum repetitive peak off-state voltage | |||
VRSM | Non-Repetitive Reverse Voltage | Tvj=125℃ | V | |
VDSM | Non-repetitive peak off-state voltage | 900 | ||
IRRM | Maximum Repetitive Reverse Current | Tvj=125℃ | 5 | mA |
IDRM | Maximum repetitive peak off-state Current | |||
IT(AV) | Mean On-state Current | TC=85℃ | 55 | |
IT(RMS) | RMS Current | TC=85℃, sin180° | 80 | A |
ITSM | Non Repetitive Surge Peak On-state Current | 10ms, Tj=25℃ | 1100 | |
I2t | For Fusing | 10ms, Tj=25℃ | 6050 | A2S |
VTM | Peak on-state voltage | ITM=150A | 1.7 | V |
dv/dt | critical rate of rise of off-state voltage | VD =2/3VDRM Gate Open Tj=125℃ | 1000 | V/us |
IGT | gate trigger current max. | 80 | mA | |
VGT | gate trigger voltage max. | 1.5 | V | |
IH | gate trigger current | 200 | mA | |
IL | latching current | 500 | mA | |
Viso | AC 50Hz RMS 1min | 2500 | V | |
TJ | Junction Temperature | -40 to +125 | ℃ | |
TSTG | Storage Temperature Range | -40 to +125 | ||
RthJC | Junction to Case Thermal Resistance(Per thyristor chip ) | 0.7 | ℃ /W | |
Torque | mounting force, Module to Sink | 2.5 | Nm | |
Tsolder | Teminals,10s | 260 | ℃ |
O utline
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Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.