Costruzione epitassiale Diodo a barriera Schottky 5.0AMP SBD

TYPE NUMBER

SB520

SB540

SB540

SB580

SB5100

SB5150

SB5200

UNITS

Maximum Recurrent Peak Reverse Voltage

20

40

60

80

100

150

200

V

Maximum RMS Voltage

14

32

42

56

70

105

140

V

Maximum DC Blocking Voltage

20

40

60

80

100

150

200

V

Maximum Average Forward Rectified Current

See Fig. 1

5.0

A

Peak Forward Surge Current, 8.3 ms single half sine-wave

superimposed on rated load (JEDEC method)

150

A

Maximum Instantaneous Forward Voltage at 5.0A

0.55

0.70

0.85

V

Maximum DC Reverse Current Ta=25 C

at Rated DC Blocking Voltage Ta=100 C

200

20

uA

mA

Typical Junction Capacitance (Note1)

380

pF

Typical Thermal Resistance RqJA (Note 2)

10

C/W

Operating Temperature Range TJ

-65 +150

C

Storage Temperature Range TSTG

-65 +150

C