$268≥20Piece/Pieces
| Tipo di pagamento: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Quantità di ordine minimo: | 20 Piece/Pieces |
| Trasporti: | Ocean,Air |
| Porta: | Shanghai |
Ombra:
Modello: YZPST-KK2000A4000V
marchio: YZPST
| Unità vendibili | : | Piece/Pieces |
| Tipo pacchetto | : | 1. Imballaggio anti-elettrostatico 2. Scatola di cartone 3. Imballaggio protettivo in plastica |
The file is encrypted. Please fill in the following information to continue accessing it
ALTA POTENZA THYRISTOR PER APPLICAZIONI DI CONTROLLO FASE
YZPST-KK2000A4000V
Caratteristiche:
. Tutta la struttura diffusa
. Configurazione interdigitata del gate di amplificazione
. Tempo massimo di consegna garantito
. Elevata capacità dV / dt
. Dispositivo assemblato a pressione
CARATTERISTICHE ELETTRICHE E VALUTAZIONIK ing bloc - Off S tate
|
Device Type |
VRRM (1) |
VDRM (1) |
VRSM (1) |
|
KK2000A |
4000 |
4000 |
4100 |
V RRM = R e p etiti v e p a k r e v e r s e v o lta g e
V DRM = R e p etiti v e p a k o f f s tate v o lta g e
V R S M = N o n r e p etiti v e p a k r e v e r s e v o lta g e (2 )
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM |
20 mA 200 mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
1000 V/msec |
Co n ducting - on s tate
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Average value of on-state current |
IT(AV) |
|
2000 |
|
A |
Sinewave,180o conduction,Tc=70oC |
|
RMS value of on-state current |
ITRMS |
|
3300 |
|
A |
Nominal value |
|
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
42000
39000 |
|
A
A |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
5.5x106 |
|
A2s |
8.3 msec |
|
Latching current |
IL |
|
1000 |
|
mA |
VD = 24 V; RL= 12 ohms |
|
Holding current |
IH |
|
500 |
|
mA |
VD = 24 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
2.60 |
|
V |
ITM = 2000 A; Tj = 125 oC |
|
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
800 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
|
Critical rate of rise of on-state current (6) |
di/dt |
|
300 |
|
A/ms |
Switching from VDRM £ 1000 V |
G a ting
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
|
Peak gate current |
IGM |
|
20 |
|
A |
|
|
Gate current required to trigger all units |
IGT |
|
300 200 125 |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
|
Gate voltage required to trigger all units |
VGT |
0.30 |
5 4 |
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
|
Peak negative voltage |
VGRM |
|
20 |
|
V |
|
D y na m ic
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
|
Delay time |
td |
|
|
2.0 |
|
ms |
ITM = 50 A; VD = 67% VDRM Gate pulse: VG = 30 V; RG = 10 ohms; tr = 0.1 ms; tp = 20 ms |
|
Turn-off time (with VR = -5 V) |
tq |
|
|
100 |
|
ms |
ITM > 2000 A; di/dt = 25 A/ms; VR ³ -5 V; Re-applied dV/dt = 400 V/ms linear to 67% VDRM ; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
|
Reverse recovery current |
Irr |
|
200 |
|
|
A |
ITM > 2000 A; di/dt = 25 A/ms; VR ³ -50 V; Tj = 125 oC |
CARATTERISTICHE E VALUTAZIONI TERMICHE E MECCANICHE
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
|
Thermal resistance - junction to case |
RQ (j-c) |
|
0.012 |
|
o C/W |
Double sided cooled Single sided cooled |
|
Thermal resistamce - case to sink |
RQ (c-s) |
|
0.002 |
|
o C/W |
Double sided cooled * Single sided cooled * |
|
Mounting force |
P |
8000 35.5 |
10000 44.4 |
|
lb. kN |
|
|
Weight |
W |
|
|
3.5 1.60 |
Lb. Kg. |
|
* M o un ti n g su r f a c es s m oo t h , f lat un n G r e a s ed
N o te : f o r c a s e o u n e TLI a n d d i m e ns i o ns , s ee c a s e o u n e TLI dr a w n g g nel p a g e 3 o f t h è T e c hn ical Dati
|
A: |
84 |
mm |
|
B: |
118 |
mm |
|
C: |
108 |
mm |
|
E: |
36 |
mm |
Numero Di Telefono: 86-514-87782298
Whatsapp: +86 13805278321
Azienda Indirizzo: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
sito web: https://it.yzpst.com
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Contact Now