Stabilità di tensione 600V BTA12-600C TO-220A TRIAC
$0.164000-19999 Piece/Pieces
$0.14≥20000Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
$0.164000-19999 Piece/Pieces
$0.14≥20000Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
Modello: YZPST-BTA12-600C
marchio: Yzpst
Luogo D'origine: Cina
IT (RMS): 12A
VDRM / VRRM: 600V
VTM: 1.55v
ITSM: 155A
I2t: 70A2S
DI/dt: 50A/ μs
IGM: 4A
PG(AV): 1W
Tstg: -40--+150℃
Tj: -40--+125℃
Unità vendibili | : | Piece/Pieces |
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To-220a
Funzione principale (TJ = 25 ℃ )
Symbol |
Value |
Unit |
IT (RMS) |
12 |
A |
VDRM / VRRM |
600/800 |
V |
VTM |
1.55 |
V |
Valutazioni assolute (valori limitanti)
Symbol |
Parameter |
Value |
Unit |
ITSM |
Non repetitive surge peak on-state Current (tp=10ms) |
115 |
A |
I2t |
(tp=10ms) |
70 |
A2S |
dI/dt |
IG=2IGT ,tr≤100ns,Tj=125℃ |
50 |
A/ μs |
IGM |
Peak gate current(tp=20us) |
4 |
A |
PG(AV) |
Average gate power |
1 |
W |
Tstg Tj |
Storage temperature Operating junction temperature |
-40--+150 -40--+125 |
℃ |
Resistenze Thermai
Symbol | ||||
Parameter | Value | Unit | ||
TO-220A | 2.3 | |||
Rth (j-c) | Junction to case | TO-220B/TO-220C | 1.4 | ℃/W |
TO-220F | 3.9 |
Caratteristiche elettriche (TJ = 25 ℃ se non diversamente indicato)
Symbol | Test Conditions | Value | Unit | ||||||
TW | SW | CW | BW | C | B | ||||
IGT | VD=12V, RL=30Ω | ⅠⅡⅢ | ≤5 | ≤10 | ≤25 | ≤50 | ≤25 | ≤50 | mA |
Ⅳ | ---- | ---- | ---- | ---- | ≤50 | ≤100 | |||
IDRM | VD=VDRM | Tj=25℃ | ≤5 | μA | |||||
Tj=125℃ | ≤1 | mA | |||||||
IRRM | VD=VRRM | Tj=25℃ | ≤5 | μA | |||||
Tj=125℃ | ≤1 | mA | |||||||
ⅠⅢ | ≤10 | ≤25 | ≤50 | ≤70 | ≤40 | ≤50 | |||
IL | IG=1.2IGT | Ⅳ | ---- | ---- | ---- | ---- | ≤40 | ≤50 | mA |
Ⅱ | ≤15 | ≤30 | ≤60 | ≤80 | ≤80 | ≤100 | |||
VGT | VD=12V ,RL=30Ω | ≤1.3 | V | ||||||
VGD | VD=VDRM, Tj=125℃RL=3.3KΩ | ≥0.2 | V | ||||||
VTM | ITM=17A,tp=380 μs | 1.55 | V | ||||||
IH | VD=12V ,IT=200mA | ≤20 | ≤25 | ≤35 | ≤50 | ≤25 | ≤50 | mA | |
dV/dt | VD=67%VDRM, | ≥40 | ≥ | ≥ | ≥ 1000 | ≥ | ≥400 | v/ μs | |
GateOpen, Tj=125℃ | 100 | 400 | 200 |
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