TO-220 BTA216-800B Serie TRIAC è adatto per la commutazione CA per scopi generici
$0.154000-19999 Piece/Pieces
$0.13≥20000Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
$0.154000-19999 Piece/Pieces
$0.13≥20000Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Land,Express,Others |
Porta: | SHANGHAI |
Modello: YZPST-BTA216-800B
marchio: Yzpst
Luogo D'origine: Cina
IT(RMS): 16A
VDRM/VRRM: 600/800V
IGT: ≤10mA
ITSM (t=20ms): 140A
ITSM (t= 16.7ms): 150A
I2t: 98A2S
Di/dt: 100A/μs
Unità vendibili | : | Piece/Pieces |
Tipo pacchetto | : | 1. Packaging antielettrostatico 2. Casella di cartone 3. Braccia |
Scaricare | : |
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CARATTERISTICHE PRINCIPALI
Symbol | Value | Unit |
IT(RMS) | 16 | A |
VDRM/VRRM | 600/800 | V |
IGT | ≤10 | mA |
VALUTAZIONI MASSIME ASSOLUTE
Symbol | PARAMETER | Value | Unit | |
IT(RMS) | RMS on-state current(full sine wave) | TO-220.Non-Ins TC≤99℃ | 16 | A |
Non repetitive surge peak on-state current | t=20ms | 140 | ||
ITSM | (full sine wave, Tj=25℃) | t= 16.7ms | 150 | A |
I2t | I2t Value for fusing | t= 10ms | 98 | A2S |
di/dt | Repetitive rate of rise of on-state Current after triggering | ITM = 20 A; IG = 0.2 A dIG/dt = 0.2 A/us | 100 | A/μs |
IGM | Peak gate current, | — | 2 | A |
VGM | Peak gate voltage | — | 5 | W |
PGM | Peak gate power | — | 5 | W |
PG(AV) | Average gate power | over any 20 ms period | 0.5 | W |
Tstg | Storage junction temperature range | -40 to +150 | ℃ | |
Tj | Operating junction temperature range | 125 | ℃ |
Caratteristiche statiche
Symbol | Parameter | Test Condition | Quadrant | Value | Unit | ||
MIN | TYPE | MAX | |||||
IGT | Gate trigger current | VD= 12V, IT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | 10 | mA |
VD= 12V, IT=0. 1A | - | 0.7 | 1.5 | ||||
VGT | Gate trigger voltage | VD=400V, IT=0. 1A,Tj= 125°C | 0.25 | 0.4 | - | V | |
VT | On-state voltage | IT=20A | - | 1.2 | 1.5 | V | |
IH | Holding current | VD= 12V, IGT=0. 1A | Ⅰ-Ⅱ-Ⅲ | - | - | mA | |
Ⅰ-Ⅲ | - | - | 60 | mA | |||
IL | Latching current | VD= 12V, IGT=0. 1A | Ⅱ | - | - | 90 | mA |
ID | Off-state leakage current | VD = VDRM(max); Tj= 125 ˚C | - | 0.1 | 0.5 | mA |
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