65R72GF N-channel Power MOSFET come sostituzione di STW48N60M2
$4.25100-999 Piece/Pieces
$3.2≥1000Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Air |
Porta: | SHANGHAI |
$4.25100-999 Piece/Pieces
$3.2≥1000Piece/Pieces
Tipo di pagamento: | L/C,T/T,Paypal |
Incoterm: | FOB,CFR,CIF |
Trasporti: | Ocean,Air |
Porta: | SHANGHAI |
Modello: YZPST-65R72GF
marchio: Yzpst
Luogo D'origine: Cina
VDS (V) A TJ Max.: 700
RDS (OFI) Max. A 25 ° C (MQ): VGS = 10V 72
QG Max. (NC): 130
QGS (NC): 30
QGD (NC): 34
Configurazione: separare
Unità vendibili | : | Piece/Pieces |
Tipo pacchetto | : | 1. Imballaggio antielettrostatico 2. Box cartone 3. Packaging protettivo in plastica |
Scaricare | : |
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Mosfet di potere N-canale
Tipo: YZPST-65R72GF
PRODUCT SUMMARY | |
Vds (V) at Tj max. | 700 |
Rds(ofi)max. at 25°C (mQ) | Vgs=10V 72 |
Qg max. (nC) | 130 |
Qgs (nC) | 30 |
Qgd (nC) | 34 |
Configuration | single |
Applicazioni
Alimentatori in modalità di commutazione (SMPS)ORDERING INFORMATION | |
Device | YZPST-65R72GF |
Device Package | TO-247 |
Marking | 65R72GF |
ABSOLUTE MAXIMUM RATINGS (Tc=25oC, unless otherwise noted) | |||
Parameter | Symbol | Limit | Unit |
Drain to Source Voltage | Vdss | 650 | V |
Continuous Drain Current (@Tc=25°C) | Id | 47⑴ | A |
Continuous Drain Current (@Tc=100°C) | 29⑴ | A | |
Drain current pulsed (2) | Idm | 138⑴ | A |
Gate to Source Voltage | Vgs | ±30 | V |
Single pulsed Avalanche Energy(3) | Eas | 1500 | mJ |
MOSFET dv/dt ruggedness (@VDS=0~400V) | dv/dt | 25 | V/ns |
Peak diode Recovery dv/dt ⑷ | dv/dt | 15 | V/ns |
Total power dissipation (@Tc=25°C) | Pd | 417 | W |
Derating Factor above 25°C | 3.34 | w/°c | |
Operating Junction Temperature & StorageTemperature | Tstg, Tj | -55to + 150 | °C |
Maximum lead temperature for soldering purpose | Tl | 260 | °C |
Appunti
1. La corrente di scarico è limitata dalla temperatura massima di giunzione.
2. Valutazione ripetitiva: larghezza dell'impulso limitato per temperatura di giunzione.
3 l = 37mh , l as = 9a, v dd = 50V, r g = 25q, a partire da TJ = 25 ° C
4. i sd <l d , di/dt = woa/us, v dd <bv dss , a partire da tj = 25 ° C
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