$3501-9 Piece/Pieces
$250≥10Piece/Pieces
| Tipo di pagamento: | L/C,T/T,Paypal |
| Incoterm: | FOB,CFR,CIF |
| Trasporti: | Ocean,Air |
| Porta: | SHANGHAI |
Modello: YZPST-KP4350A1600V
marchio: Yzpst
VRRM: 1600V
VDRM: 1600V
I RRM /I DRM: 450A
I T(AV): 4350A
| Unità vendibili | : | Piece/Pieces |
| Tipo pacchetto | : | 1. Imballaggio antielettrostatico 2. Box cartone 3. Packaging protettivo in plastica |
| Scaricare | : |
|
Tiristore ad alta potenza per applicazioni di controllo delle fasi
YZPST-KP4350A1600V
Caratteristiche:
. Tutta la struttura diffusa
. Configurazione del gate di amplificazione lineare
. Blocco della capacità fino a 16 00 volt
. Tempo massimo di consegna garantito
. Alta funzionalità DV/DT
. Dispositivo assemblato a pressione
Caratteristiche elettriche e valutazioni
Blocco - Off State
|
Device Type |
VRRM (1) |
VDRM (1) |
VRSM (1) |
|
KP4350A |
1600 |
1600 |
1700 |
V rrm = tensione inversa del picco ripetitivo
V DRM = Picco ripetitivo OFF Tensione dello stato
V RSM = Tensione inversa del picco non ripetitivo (2)
|
Repetitive peak reverse leakage and off state leakage |
IRRM / IDRM
|
450 mA (3) |
|
Critical rate of voltage rise |
dV/dt (4) |
300 V/msec |
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Average value of on-state current |
IT(AV) |
|
4350 |
|
A |
Sinewave,180o conduction,TS=70oC |
|
Peak one cpstcle surge (non repetitive) current |
ITSM |
|
48900
|
|
A
|
10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
|
I square t |
I2t |
|
11.9x106 |
|
A2s |
10.0 msec |
|
Latching current |
IL |
|
1000 |
|
mA |
VD = 12 V; RL= 12 ohms |
|
Holding current |
IH |
|
450 |
|
mA |
VD = 12 V; I = 2.5 A |
|
Peak on-state voltage |
VTM |
|
1.5 |
|
V |
ITM = 6000 A; Duty cpstcle £ 0.01% Tj = 25 oC |
|
Critical rate of rise of on-state current (5) |
di/dt |
|
200 |
|
A/ms |
Switching from VDRM £ 1000 V, non-repetitive |
Gating
|
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
|
Peak gate power dissipation |
PGM |
|
200 |
|
W |
tp = 40 us |
|
Average gate power dissipation |
PG(AV) |
|
5 |
|
W |
|
|
Peak gate current |
IGM |
|
15 |
|
A |
|
|
Gate current required to trigger all units |
IGT |
30 |
300 200 125 |
|
mA mA mA |
VD = 12 V;RL = 6 ohms;Tj = -40 oC VD = 12 V;RL = 6 ohms;Tj = +25 oC VD = 12 V;RL = 6 ohms;Tj = +125oC |
|
Gate voltage required to trigger all units
|
VGT |
0.30 |
5 3
|
|
V V V |
VD = 12 V;RL = 6 ohms;Tj = -40 oC VD = 12 V;RL = 6 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
|
Peak negative voltage |
VGRM |
|
15 |
|
V |
|
Schema e dimensioni del caso.
Numero Di Telefono: 86-514-87782298
Whatsapp: +8613805278321
Azienda Indirizzo: 3rd Floor, Weiheng Building No.20 B Area, Yangzhou, Jiangsu China
sito web: https://it.yzpst.com
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