YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Casa> Elenco prodotti> Dispositivi a disco a semiconduttore (tipo di capsula)> Controllo della fase Thyristor.> Tiranti KP300A1600V tiristori ST330S16
Tiranti KP300A1600V tiristori ST330S16
Tiranti KP300A1600V tiristori ST330S16
Tiranti KP300A1600V tiristori ST330S16

Tiranti KP300A1600V tiristori ST330S16

$35≥20Piece/Pieces

Tipo di pagamento:L/C,T/T,Paypal
Incoterm:FOB,CFR,CIF
Quantità di ordine minimo:20 Piece/Pieces
Trasporti:Ocean,Air
Porta:Shanghai
Caratteristiche del prodotto

ModelloYZPST-ST330S16

marchioYZPST

Confezionamento e consegna
Unità vendibili : Piece/Pieces
Tipo pacchetto : 1. Imballaggio anti-elettrostatico 2. Scatola di cartone 3. Imballaggio protettivo in plastica
Descrizione del prodotto

Tiristori per controllo di fase

YZPST-ST330S16

Caratteristiche

● Configurazione del gate di amplificazione centrale

● Incapsulamento a compressione

● Elevata capacità dV / dt

● Tipo di perno, pollice o metrica

Applicazioni tipiche
● Commutazione a media potenza
● Alimentatori CC

Valutazioni e caratteristiche massime

Symbol

Parameter

Values

Units

Test Conditions

ON-STATE

ITAV

Mean on-state current

330

A

Sinewave,180° conduction,Tc=75

ITRMS

RMS value of on-state current

520

A

Nominal value

ITSM

Peak one cycle surge

(non repetitive) current

9000

A

10.0 msec (50Hz), sinusoidal wave-

shape, 180o conduction, Tj = 125 oC

I2t

I square t

405

KA2s

8.3 msec and 10.0 msec

IL

Latching current

1000

mA

VD = 24 V; RL= 12 ohms

IH

Holding current

600

mA

VD = 24 V; I = 2.5 A

VTM

Peak on-state voltage

1.51

V

ITM = 1040 A; Duty cycle £ 0.01%

di/dt

Critical rate of rise

of on-state current

non-repetitive

1000

A/ms

Tj =100 oC V D= 1/2VDRM, ITM=(2x ITAV) A

Gate pulse:tw≥20μs, tr≤0.5μs fG=50Hz

IGM≥5 IGT

repetitive

-

BLOCKING

VDRM

VRRM

Repetitive peak off state voltage

Repetitive peak reverse voltage

1600

V

VDSM

VRSM

Non repetitive peak off state voltage

Non repetitive peak reverse voltage

1700

V

IDRM

IRRM

Repetitive peak off state current Repetitive peak reverse  current

50

mA

Tj = 100 oC ,VRRM VDRM applied

dV/dt

Critical rate of voltage rise

500

V/ms

Tj = 100 oC VD =0.67 VDRM  Gate open

TRIGGEING

PG(AV)

Average gate power dissipation

2.0

W

PGM

Peak gate power dissipation

10

W

IGM

Peak gate current

3.0

A

IGT

Gate trigger current

200

mA

TC = 25 oC

VGT

Gate trigger voltage

3.0

V

TC = 25 oC

VGD

Gate non-trigger voltage

0.25

V

Tj = 125 oC

SWITCHING

tq

Turn-off time

100

ms

Qrr

Reverse recovery charge

-



Termico e meccanico

Symbol

Parameter

Values

Units

Test Conditions

Tj

Operating temperature

-40~125

oC

Tstg

Storage temperature

-40~150

oC

R th (j-c)

Thermal resistance - junction to case

0.1

K/W

DC operation ,Single sided cooled

R th (c-s)

Thermal resistance - case to sink

0.03

K/W

Single sided cooled

P

Mounting force

48.5

Nm

W

Weight

530

g

about

SCHEMA

Thyristors ST330S16(2)

苏ICP备05018286号-1
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