YANGZHOU POSITIONING TECH CO., LTD.
YANGZHOU POSITIONING TECH CO., LTD.
Casa> Elenco prodotti> Pacchetto di plastica a semiconduttore> BIE Direzioni THIRISTOR (TRIAC)> Tiristore triac bt134 scr bt134 triac
Tiristore triac bt134 scr bt134 triac
Tiristore triac bt134 scr bt134 triac
Tiristore triac bt134 scr bt134 triac

Tiristore triac bt134 scr bt134 triac

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Caratteristiche del prodotto

ModelloYZPST-BT134

marchioYZPST

Descrizione del prodotto

TRIAC

YZPST- B T134

Pacchetto

TO-220P triac BT134 (1)

Caratteristica principale (Tj = 25)

Symbol

Value

Unit

IT(RMS)

2

A

VDRM / VRRM

600

V

IGT 4

6-10

mA

Valutazioni assolute (valori limite)

Symbol

Parameter

Value

Unit

IT(RMS)

Rms on-state current(full sine wave)

2

A

ITSM

Non- repetitive Peak on-state

Current (Tj=25,tp=20ms)

25

A

I2t

I2t  for fusing(tp=10ms)

2.6

A2S

IGM

Peak gate current

2

A

VGM

Peak gate voltage

5

V

PGM

Peak gate power

5

W

PG(AV)

Average gate power

0.5

W

dIT/dt

Repetitive rate of rise of on-state current after triggering
(IT=6A,IG=0.2A,dlG/dt=0.2A/us)

--

50

A/μs

10

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+110

Resistenze Thermai

Symbol

Parameter

Value

Unit

Rth (j-c)

Thermal Resistance,Junction to case

3.0

/W

Rth (j-a)

Thermal Resisatance,Junction to ambient

60

/W

Caratteristiche elettriche ( Tj = 25 se non diversamente indicato )

Symbol

 Test Conditions

Quadrant

 

Value

Unit

IGT

VD=12V, RL=30Ω, IT=0.1A

--

max

8

mA

min

6

 

 

max

10

VGT

VD=12V, RL=30Ω

ALL

max

1.5

V

VGD

VD=VDRM, RL=3.3KΩ Tj=110

ALL

min

0.2

V

IH

VD=12V, IT=0.1A

ALL

max

10

mA

Il

VD=12V ,IG=1.21GT

-

max

10

mA

-

15

dV/dt

VD=67%VDRM, GateOpen,Tj=110

 

min

10

v/μs

VTM

IT=5A,tp=380μs

ALL

max

1.7

V

IDRM

IRRM

VD=VDRM

VR=VRRM

Tj=25

 

max

0.01

mA

Tj=125

0.2

triac BT134 (2)triac BT134 (3)triac BT134 (4)



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